Infineon Technologies . IPB65R190C6
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Hotenda | H1832747 | 1 | 1 | ||
| 1Source | IPB65R190C6 | 1 | 1 |
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MOSFET 650V CoolMOS C6 Power Transistor (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 20.2 A Rds On - Drain-Source Resistance: 190 mOhms Configuration: Single Qg - Gate Charge: 73 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 151 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPB65R190C6 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET 650V CoolMOS C6 Power Transistor (100 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 20.2 A Rds On - Drain-Source Resistance: 190 mOhms Configuration: Single Qg - Gate Charge: 73 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 151 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPB65R190C6 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET 650V CoolMOS C6 Power Transistor (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 20.2 A Rds On - Drain-Source Resistance: 190 mOhms Configuration: Single Qg - Gate Charge: 73 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 151 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPB65R190C6 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET 650V CoolMOS C6 Power Transistor (50 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 20.2 A Rds On - Drain-Source Resistance: 190 mOhms Configuration: Single Qg - Gate Charge: 73 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 151 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPB65R190C6 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
IPB65R190C6
Brand: Infineon
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | IPB65R190C6 |
| Label | Infineon |
| Manufacturer | Infineon |
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 20.2 A Rds On - Drain-Source Resistance: 190 mOhms Configuration: Single Qg - Gate Charge: 73 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 151 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPB65R190C6 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |