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IPB65R600C6 Transistor - CASE: Standard MAKE: INFINEON

INFINEON . IPB65R600C6

Attributes

Brand name, Manufacturer nameINFINEON
ManufacturerINFINEON Infineon Infineon Technologies
Attribute00Standard
Attribute01Transistor
Attribute02Infineon - Siemens
Attribute03486862
AttributeKey00Case
AttributeKey01Type
AttributeKey02Manufacturer
AttributeKey03SKU
keywordsBuy IPB65R600C6, IPB65R600C6, IPB65R600C6 Transistor
moq, multiple1
MPN, SKU, Part Number, PartNumberIPB65R600C6
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippetIPB65R600C6 Transistor - CASE: Standard MAKE: INFINEON
Product GroupBISS
ASINB00M2DSAFK
AsinB00LWOI9PQ B00LWOIDGG B00LWOIGDQ B00LWOIPJQ B00M2DSAFK
Brand, Label, Publisher, StudioInfineon Infineon Technologies
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPB65R600C6 X1 MS 726-IPB65R600C6 X10 MS 726-IPB65R600C6 X100 MS 726-IPB65R600C6 X5 MS 726-IPB65R600C6 X50
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 7.3 A Rds On - Drain-Source Resistance: 600 mOhms Configuration: Single Qg - Gate Charge: 23 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 63 W Mounting Style: SMD/SMT
FetchTime1566345955
Height51
ManInfineon Technologies
ProductGroupBISS BISS Basic
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleIPB65R600C6 MOSFET 650V CoolMOS C6 Power Transistor (1 piece) MOSFET 650V CoolMOS C6 Power Transistor (10 pieces) MOSFET 650V CoolMOS C6 Power Transistor (100 pieces) MOSFET 650V CoolMOS C6 Power Transistor (5 pieces) MOSFET 650V CoolMOS C6 Power Transistor (50 pieces)
URLhttp://ecx.images-amazon.com/images/I/117qVKnkSBL._SL75_.jpg
Unitspixels
Width75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Little DiodeIPB65R600C611
Digi-Key121296411146 @ $0.61
swatee.comIPB65R600C6134811 @ $3.56
Win SourceIPB65R600C61650001
HotendaH183246211
1SourceIPB65R600C611

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MOSFET 650V CoolMOS C6 Power Transistor (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 7.3 A Rds On - Drain-Source Resistance: 600 mOhms Configuration: Single Qg - Gate Charge: 23 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 63 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPB65R600C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 650V CoolMOS C6 Power Transistor (100 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 7.3 A Rds On - Drain-Source Resistance: 600 mOhms Configuration: Single Qg - Gate Charge: 23 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 63 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPB65R600C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 650V CoolMOS C6 Power Transistor (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 7.3 A Rds On - Drain-Source Resistance: 600 mOhms Configuration: Single Qg - Gate Charge: 23 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 63 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPB65R600C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 650V CoolMOS C6 Power Transistor (50 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 7.3 A Rds On - Drain-Source Resistance: 600 mOhms Configuration: Single Qg - Gate Charge: 23 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 63 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPB65R600C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
IPB65R600C6
Brand: Infineon
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberIPB65R600C6
LabelInfineon
ManufacturerInfineon
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 7.3 A Rds On - Drain-Source Resistance: 600 mOhms Configuration: Single Qg - Gate Charge: 23 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 63 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPB65R600C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)