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IPB70N04S3-07 Infineon Technologies | Discrete Semiconductor Products | DigiKey

Infineon Technologies . IPB70N04S3-07

Attributes

Brand name, Manufacturer name, Manufacturer, Attribute01, Brand, Label, Man, Publisher, StudioInfineon Technologies
Attribute00Discrete Semiconductor Products
Attribute02OptiMOS?
Attribute03Tape & Reel (TR)
Attribute04Obsolete
Attribute05N-Channel
Attribute06MOSFET (Metal Oxide)
Attribute0740 V
Attribute0880A (Tc)
Attribute0910V
Attribute106.2mOhm @ 70A, 10V
Attribute114V @ 50?A
Attribute1240 nC @ 10 V
Attribute13?20V
Attribute142700 pF @ 25 V
Attribute15-
Attribute1679W (Tc)
Attribute17-55?C ~ 175?C (TJ)
Attribute18Surface Mount
Attribute19PG-TO263-3-2
Attribute20TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Attribute21IPB70N
AttributeKey00Category
AttributeKey01Mfr
AttributeKey02Series
AttributeKey03Package
AttributeKey04Product Status
AttributeKey05FET Type
AttributeKey06Technology
AttributeKey07Drain to Source Voltage (Vdss)
AttributeKey08Current - Continuous Drain (Id) @ 25?C
AttributeKey09Drive Voltage (Max Rds On, Min Rds On)
AttributeKey10Rds On (Max) @ Id, Vgs
AttributeKey11Vgs(th) (Max) @ Id
AttributeKey12Gate Charge (Qg) (Max) @ Vgs
AttributeKey13Vgs (Max)
AttributeKey14Input Capacitance (Ciss) (Max) @ Vds
AttributeKey15FET Feature
AttributeKey16Power Dissipation (Max)
AttributeKey17Operating Temperature
AttributeKey18Mounting Type
AttributeKey19Supplier Device Package
AttributeKey20Package / Case
AttributeKey21Base Product Number
Extra Product NameIPB70N04S3-07 Infineon Technologies | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple1
extraShipping, qtyInStock0
MPN, Part Number, PartNumberIPB70N04S3-07
SKU2231356
snippetN-Channel 40 V 80A (Tc) 79W (Tc) Surface Mount PG-TO263-3-2
Product Group, ProductGroupBISS
AsinB00LWOJKOU B00LWOK27Y B00LWOK3V4 B00LWOK7B0 B00M2DSRVC
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPB70N04S3-07 X1 MS 726-IPB70N04S3-07 X10 MS 726-IPB70N04S3-07 X100 MS 726-IPB70N04S3-07 X5 MS 726-IPB70N04S3-07 X50
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 6.2 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 79 W Mounting Style: SMD/SMT Package / Case: D2PAK-2
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET OPTIMOS -T PWR-TRANS 40V 70A 6.8mOhms (1 piece) MOSFET OPTIMOS -T PWR-TRANS 40V 70A 6.8mOhms (10 pieces) MOSFET OPTIMOS -T PWR-TRANS 40V 70A 6.8mOhms (100 pieces) MOSFET OPTIMOS -T PWR-TRANS 40V 70A 6.8mOhms (5 pieces) MOSFET OPTIMOS -T PWR-TRANS 40V 70A 6.8mOhms (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key223135611
RS Delivers826-942411
Win SourceIPB70N04S3-0712161
HotendaH182170711
1SourceIPB70N04S3-0711
Rochester ElectronicsIPB70N04S307ATMA130001 @ $0.49, 25 @ $0.45, 100 @ $0.44, 500 @ $0.42, 1000 @ $0.40
Mouser726-IPB70N04S3-073271 @ $0.94, 10 @ $0.76, 50 @ $0.76, 100 @ $0.58, 1000 @ $0.41, 10000 @ $0.34
RS Components82694241650
Ewing ComponentsIPB70N04S3-0715000
Abacus TechnologiesIPB70N04S3-07200

Related on Amazon

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MOSFET OPTIMOS -T PWR-TRANS 40V 70A 6.8mOhms (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 6.2 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 79 W Mounting Style: SMD/SMT Package / Case: D2PAK-2
CategoryIndustrial & Scientific
MPNIPB70N04S3-07
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS -T PWR-TRANS 40V 70A 6.8mOhms (100 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 6.2 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 79 W Mounting Style: SMD/SMT Package / Case: D2PAK-2
CategoryIndustrial & Scientific
MPNIPB70N04S3-07
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS -T PWR-TRANS 40V 70A 6.8mOhms (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 6.2 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 79 W Mounting Style: SMD/SMT Package / Case: D2PAK-2
CategoryIndustrial & Scientific
MPNIPB70N04S3-07
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS -T PWR-TRANS 40V 70A 6.8mOhms (50 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 6.2 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 79 W Mounting Style: SMD/SMT Package / Case: D2PAK-2
CategoryIndustrial & Scientific
MPNIPB70N04S3-07
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS -T PWR-TRANS 40V 70A 6.8mOhms (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 6.2 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 79 W Mounting Style: SMD/SMT Package / Case: D2PAK-2
CategoryIndustrial & Scientific
MPNIPB70N04S3-07
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)