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Infineon Technologies . IPB80N06S4-05

Infineon Technologies . IPB80N06S4-05

Attributes

Brand name, Manufacturer name, Manufacturer, Brand, Label, Man, Publisher, StudioInfineon Technologies
moq, multiple, tierMinQty11
MPN, Part Number, PartNumberIPB80N06S4-05
qtyInStock0
SKUH1832358
Product Group, ProductGroupBISS
AsinB00HKZPZO4 B00LWOMMQI B00LWOMQIM
Case, PackageQuantity1 10 5
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPB80N06S4-05 X1 MS 726-IPB80N06S4-05 X10 MS 726-IPB80N06S4-05 X5
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 5.4 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 107 W Mounting Style: Through Hole Package / Case: D2PAK-2
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 5 Piece
TitleMOSFET N-Channel 60V MOSFET (1 piece) MOSFET N-Channel 60V MOSFET (10 pieces) MOSFET N-Channel 60V MOSFET (5 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
HotendaH183235811
1SourceIPB80N06S4-0511

Related on Amazon

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MOSFET N-Channel 60V MOSFET (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 5.4 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 107 W Mounting Style: Through Hole Package / Case: D2PAK-2
CategoryIndustrial & Scientific
MPNIPB80N06S4-05
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET N-Channel 60V MOSFET (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 5.4 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 107 W Mounting Style: Through Hole Package / Case: D2PAK-2
CategoryIndustrial & Scientific
MPNIPB80N06S4-05
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET N-Channel 60V MOSFET (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 5.4 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 107 W Mounting Style: Through Hole Package / Case: D2PAK-2
CategoryIndustrial & Scientific
MPNIPB80N06S4-05
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)