Infineon Technologies . IPB90N04S4-02
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Hotenda | H1832467 | 1 | 1 | ||
| 1Source | IPB90N04S4-02 | 1 | 1 |
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MOSFET N-Ch 40V 90A D2PAK-2 OptiMOS-T2 (50 pieces)
Brand: Infineon Technologies
Catalog
| Feature | <b>Price For:</b> Pack of 50 <b>Manufacturer</b>: Infineon <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 90 A <b>Vds - Drain-Source Breakdown Voltage</b>: 40 V <b>Rds On - Drain-Source Resistance</b>: 2.1 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 20 V <b>Qg - Gate Charge</b>: 91 nC <b>Maximum Operating Temperature</b>: + 175 C <b>Pd - Power Dissipation</b>: 150 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPB90N04S4-02 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Infineon Technologies |
MOSFET N-Ch 40V 90A D2PAK-2 OptiMOS-T2 (1 piece)
Brand: Infineon Technologies
Catalog
| Feature | <b>Price For:</b> Pack of 1 <b>Manufacturer</b>: Infineon <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 90 A <b>Vds - Drain-Source Breakdown Voltage</b>: 40 V <b>Rds On - Drain-Source Resistance</b>: 2.1 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 20 V <b>Qg - Gate Charge</b>: 91 nC <b>Maximum Operating Temperature</b>: + 175 C <b>Pd - Power Dissipation</b>: 150 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPB90N04S4-02 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Infineon Technologies |
MOSFET N-Ch 40V 90A D2PAK-2 OptiMOS-T2 (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | <b>Price For:</b> Pack of 10 <b>Manufacturer</b>: Infineon <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 90 A <b>Vds - Drain-Source Breakdown Voltage</b>: 40 V <b>Rds On - Drain-Source Resistance</b>: 2.1 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 20 V <b>Qg - Gate Charge</b>: 91 nC <b>Maximum Operating Temperature</b>: + 175 C <b>Pd - Power Dissipation</b>: 150 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPB90N04S4-02 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Infineon Technologies |