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Infineon Mosfet Transistor, N Channel, 40 A, 30 V, 0.0075 Ohm, 10 V, 2.2 V Rohs Compliant: Yes - IPD090N03LGATMA1

INFINEON . IPD090N03LGATMA1

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Attributes

Brand name, Manufacturer nameINFINEON
Manufacturer, Label, Man, Publisher, StudioINFINEON Infineon Technologies
CategoryL1Semiconductors - Discretes
CategoryL2FETs
CategoryL3Single MOSFETs
Extra Product NameInfineon Mosfet Transistor, N Channel, 40 A, 30 V, 0.0075 Ohm, 10 V, 2.2 V Rohs Compliant: Yes - IPD090N03LGATMA1
jsonUrlDataSemiconductors - Discretes > FETs > Single MOSFETs
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tierPrice60.415
tierPrice70.376
tierPrice80.34
urlhttps://www.newark.com/50Y2025?CMP=AFC-DATAALCHEMY
Product GroupBISS
ASINB07D91LRMH
AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
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BrandInfineon Infineon Technologies
Case1 10 100 25 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPD090N03LGATMA1 X1 MS 726-IPD090N03LGATMA1 X10 MS 726-IPD090N03LGATMA1 X100 MS 726-IPD090N03LGATMA1 X5 MS 726-IPD090N03LGATMA1 X50
ClassificationId306919011
DisplayNameMOSFET
Externally_assigned_product_identifier, Identifier7445420174116
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 7.5 mOhms Configuration: Single Qg - Gate Charge: 15 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 42 W Mounting Style: SMD/SMT
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ItemClassificationBASE_PRODUCT
ItemName, Item_nameINFINEON IPD090N03LGATMA1 N-Channel 30 V 9 mOhm 15 nC OptiMOS3 Power-Transistor - TO-252-3 - 25 item(s) IPD090N03LGATMA1, Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R (50 Items)
Item_type_keywordmosfet-transistors
Linkhttps://m.media-amazon.com/images/I/11LILwBWaNL._SL75_.jpg https://m.media-amazon.com/images/I/11LILwBWaNL.jpg https://m.media-amazon.com/images/I/11TvKWCWIPL._SL75_.jpg https://m.media-amazon.com/images/I/11TvKWCWIPL.jpg
Marketplace_idATVPDKIKX0DER
Number_of_items25 50
PackageQuantity1 10 100 5 50
ProductGroupBISS BISS Basic
ProductType, ProductTypeNameELECTRONIC_COMPONENT
Product_descriptionIPD090N03LGATMA1, Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R (50 items) N-Channel 30 V 9 mOhm 15 nC OptiMOS3 Power-Transistor - TO-252-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Product_site_launch_date2018-05-24T15:15:18.904Z 2019-03-18T21:33:33.691Z
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleINFINEON IPD090N03LGATMA1 N-Channel 30 V 9 mOhm 15 nC OptiMOS3 Power-Transistor - TO-252-3 - 25 item(s) MOSFET (1 piece) MOSFET (10 pieces) MOSFET (100 pieces) MOSFET (5 pieces) MOSFET (50 pieces)
Typeean
URLhttps://m.media-amazon.com/images/I/11LILwBWaNL._SL75_.jpg
Unitspixels pounds
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WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.000625
Width150 323 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark50Y20255183651 @ $0.74, 10 @ $0.64, 25 @ $0.57, 50 @ $0.51, 100 @ $0.45, 250 @ $0.41, 500 @ $0.38, 1000 @ $0.34
TMEIPD090N03LGATMA11147511 @ $1.49, 5 @ $0.64, 25 @ $0.56, 100 @ $0.49, 500 @ $0.45
Digi-Key178560119730911 @ $0.95, 10 @ $0.84, 100 @ $0.64, 500 @ $0.51, 1000 @ $0.41, 2500 @ $0.37, 5000 @ $0.34, 12500 @ $0.33, 25000 @ $0.27
IBS ElectronicsIPD090N03LGATMA1111 @ $0.00
RS Delivers130-089511
AmazonSCB07D91LRMH11
Win SourceIPD090N03LGATMA11121981
1SourceIPD090N03LGATMA111
Future Electronics7096792200002000020000 @ $0.23

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MOSFET (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 7.5 mOhms Configuration: Single Qg - Gate Charge: 15 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 42 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPD090N03LGATMA1
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET (100 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 7.5 mOhms Configuration: Single Qg - Gate Charge: 15 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 42 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPD090N03LGATMA1
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 7.5 mOhms Configuration: Single Qg - Gate Charge: 15 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 42 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPD090N03LGATMA1
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET (50 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 7.5 mOhms Configuration: Single Qg - Gate Charge: 15 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 42 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPD090N03LGATMA1
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 7.5 mOhms Configuration: Single Qg - Gate Charge: 15 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 42 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPD090N03LGATMA1
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
INFINEON IPD090N03LGATMA1 N-Channel 30 V 9 mOhm 15 nC OptiMOS3 Power-Transistor - TO-252-3 - 25 item(s)
Brand: Infineon
N-Channel 30 V 9 mOhm 15 nC OptiMOS3 Power-Transistor - TO-252-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelIPD090N03LGATMA1
Part numberIPD090N03LGATMA1
Items per pack25
LabelINFINEON
ManufacturerINFINEON
Catalog
CategoryIndustrial & Scientific
MPNIPD090N03LGATMA1
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerINFINEON
View on Amazon (paid link)
IPD090N03LGATMA1, Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R (50 Items)
Brand: Infineon Technologies
IPD090N03LGATMA1, Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R (50 items)
View on Amazon (paid link)