infineon . IPD25N06S2-40
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 50Y2029 | 1 | 1 | ||
| 826-8973 | 1 | 1 | |||
| Win Source | IPD25N06S2-40 | 1 | 17120 | 1 | |
| 1Source | IPD25N06S2-40 | 1 | 1 |
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MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 68 W Mounting Style: SMD/SMT Package / Case: DPAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPD25N06S2-40 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (100 pieces)
Brand: Infineon Technologies
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | IPD25N06S2-40 |
| Label | Infineon Technologies |
| Manufacturer | Infineon Technologies |
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 68 W Mounting Style: SMD/SMT Package / Case: DPAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPD25N06S2-40 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (1000 pieces)
Brand: Infineon Technologies
Catalog
| Feature | <b>Pack of:</b> 1000 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPD25N06S2-40 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 68 W Mounting Style: SMD/SMT Package / Case: DPAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPD25N06S2-40 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (50 pieces)
Brand: Infineon Technologies
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | IPD25N06S2-40 |
| Label | Infineon Technologies |
| Manufacturer | Infineon Technologies |
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 68 W Mounting Style: SMD/SMT Package / Case: DPAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPD25N06S2-40 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (500 pieces)
Brand: Infineon Technologies
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | IPD25N06S2-40 |
| Label | Infineon Technologies |
| Manufacturer | Infineon Technologies |
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 68 W Mounting Style: SMD/SMT Package / Case: DPAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPD25N06S2-40 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (1 piece)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 68 W Mounting Style: SMD/SMT Package / Case: DPAK-2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPD25N06S2-40 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |