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infineon . IPD25N06S2-40

Attributes

Brand name, Manufacturer nameinfineon
Manufacturerinfineon Infineon Technologies
extendedQty, qtyInStock0
moq, multiple1
MPN, Part Number, Keyword, PartNumber, Part_numberIPD25N06S2-40
qtySourceupdateFromUrlEntry
Product GroupBISS
ASINB00LWOYGX0 B00LWOYQVC B00LWOYYQO
AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
AsinB00LWOYDAG B00LWOYGX0 B00LWOYK8G B00LWOYNG0 B00LWOYQVC B00LWOYYQO B00M2DFIB4
Brand, Label, Man, Publisher, StudioInfineon Technologies
Case, PackageQuantity1 10 100 1000 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPD25N06S2-40 X1 MS 726-IPD25N06S2-40 X10 MS 726-IPD25N06S2-40 X100 MS 726-IPD25N06S2-40 X5 MS 726-IPD25N06S2-40 X50 MS 726-IPD25N06S2-40 X500
ClassificationId306919011
DisplayNameMOSFET
Feature<b>Pack of:</b> 1000 Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 68 W Mounting Style: SMD/SMT Package / Case: DPAK-2
FetchTime1555676626 1566055654 1566845416 1675082341 1675082469 1675082986 1704872092 1704923728 1704931562
Height116 48 75
ItemClassificationBASE_PRODUCT
ItemName, Item_nameMOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (100 pieces) MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (50 pieces) MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (500 pieces)
Item_type_keywordmosfet-transistors
Linkhttps://m.media-amazon.com/images/I/11bi0KzDCyL._SL75_.jpg https://m.media-amazon.com/images/I/11bi0KzDCyL.jpg https://m.media-amazon.com/images/I/11iulRQmTRL._SL75_.jpg https://m.media-amazon.com/images/I/11iulRQmTRL.jpg
Marketplace_idATVPDKIKX0DER
NumberOfItems1000
ProductGroupBISS BISS Basic
ProductType, ProductTypeNameELECTRONIC_COMPONENT
Product_site_launch_date2015-12-19T02:34:21.181Z 2015-12-19T02:34:48.945Z 2016-05-08T11:37:01.500Z
Size1 Piece 10 Piece 100 Piece 1000 pack 5 Piece 50 Piece 500 500 Piece
TitleMOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (1 piece) MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (10 pieces) MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (100 pieces) MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (1000 pieces) MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (5 pieces) MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (50 pieces) MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (500 pieces)
URLhttp://ecx.images-amazon.com/images/I/11bi0KzDCyL._SL75_.jpg http://ecx.images-amazon.com/images/I/11q2WrEs6DL._SL75_.jpg https://m.media-amazon.com/images/I/11bi0KzDCyL._SL75_.jpg https://m.media-amazon.com/images/I/11iulRQmTRL._SL75_.jpg
Unitspixels
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Width183 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark50Y202911
RS Delivers826-897311
Win SourceIPD25N06S2-401171201
1SourceIPD25N06S2-4011

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MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 68 W Mounting Style: SMD/SMT Package / Case: DPAK-2
CategoryIndustrial & Scientific
MPNIPD25N06S2-40
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (100 pieces)
Brand: Infineon Technologies
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberIPD25N06S2-40
LabelInfineon Technologies
ManufacturerInfineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 68 W Mounting Style: SMD/SMT Package / Case: DPAK-2
CategoryIndustrial & Scientific
MPNIPD25N06S2-40
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (1000 pieces)
Brand: Infineon Technologies
Catalog
Feature<b>Pack of:</b> 1000
CategoryIndustrial & Scientific
MPNIPD25N06S2-40
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 68 W Mounting Style: SMD/SMT Package / Case: DPAK-2
CategoryIndustrial & Scientific
MPNIPD25N06S2-40
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (50 pieces)
Brand: Infineon Technologies
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberIPD25N06S2-40
LabelInfineon Technologies
ManufacturerInfineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 68 W Mounting Style: SMD/SMT Package / Case: DPAK-2
CategoryIndustrial & Scientific
MPNIPD25N06S2-40
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (500 pieces)
Brand: Infineon Technologies
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberIPD25N06S2-40
LabelInfineon Technologies
ManufacturerInfineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 68 W Mounting Style: SMD/SMT Package / Case: DPAK-2
CategoryIndustrial & Scientific
MPNIPD25N06S2-40
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS PWR-TRANS N-CH 55V 29A (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 40 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 68 W Mounting Style: SMD/SMT Package / Case: DPAK-2
CategoryIndustrial & Scientific
MPNIPD25N06S2-40
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)