As an Amazon Associate, we earn from qualifying purchases.

Infineon . IPD50R950CE

Infineon . IPD50R950CE

Gallery

Attributes

Brand name, Manufacturer name, Attribute04Infineon
ManufacturerInfineon Infineon Technologies
Attribute00+150 °C
Attribute01, moq, multiple1
Attribute026.73mm
Attribute03Single
Attribute054.3 A
Attribute06TO-252
Attribute0734 W
Attribute08CoolMOS CE
Attribute09Surface Mount
Attribute10-55 °C
Attribute116.22mm
Attribute123.5V
Attribute132.5V
Attribute142.41mm
Attribute15, AttributeKey15Maximum Drain Source Resistance
Attribute16, AttributeKey16Maximum Drain Source Voltage
Attribute17, AttributeKey17Pin Count
Attribute18, AttributeKey18Typical Gate Charge @ Vgs
Attribute19, AttributeKey19Channel Mode
Attribute20, AttributeKey20Channel Type
Attribute21, AttributeKey21Stock
AttributeKey00Maximum Operating Temperature
AttributeKey01Number of Elements per Chip
AttributeKey02Length
AttributeKey03Transistor Configuration
AttributeKey04Brand
AttributeKey05Maximum Continuous Drain Current
AttributeKey06Package Type
AttributeKey07Maximum Power Dissipation
AttributeKey08Series
AttributeKey09Mounting Type
AttributeKey10Minimum Operating Temperature
AttributeKey11Width
AttributeKey12Maximum Gate Threshold Voltage
AttributeKey13Minimum Gate Threshold Voltage
AttributeKey14Height
jsonUrlData8275057
MPN, Part Number, PartNumberIPD50R950CE
SKU827-5057
Product Group, ProductGroupBISS
AsinB00LWO3L2W B00LWO3N6Q B00LWO3P46 B00LWO3R0I B00LWO3TZG B00M2DL0KW
Brand, Label, Man, Publisher, StudioInfineon Technologies
Case, PackageQuantity1 10 100 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPD50R950CE X1 MS 726-IPD50R950CE X10 MS 726-IPD50R950CE X100 MS 726-IPD50R950CE X5 MS 726-IPD50R950CE X50 MS 726-IPD50R950CE X500
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 4.3 A Rds On - Drain-Source Resistance: 950 mOhms Configuration: Single Qg - Gate Charge: 10.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 34 W Mounting Style: Through Hole
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece 500
TitleMOSFET 500V 950 RDS CoolMOS Superjunction MOSFET (1 piece) MOSFET 500V 950 RDS CoolMOS Superjunction MOSFET (10 pieces) MOSFET 500V 950 RDS CoolMOS Superjunction MOSFET (100 pieces) MOSFET 500V 950 RDS CoolMOS Superjunction MOSFET (5 pieces) MOSFET 500V 950 RDS CoolMOS Superjunction MOSFET (50 pieces) MOSFET 500V 950 RDS CoolMOS Superjunction MOSFET (500 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
RS Delivers827-505711
1SourceIPD50R950CE11
Digi-KeyIPD50R950CEINTR-ND12500

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

MOSFET 500V 950 RDS CoolMOS Superjunction MOSFET (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 4.3 A Rds On - Drain-Source Resistance: 950 mOhms Configuration: Single Qg - Gate Charge: 10.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 34 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPD50R950CE
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 500V 950 RDS CoolMOS Superjunction MOSFET (100 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 4.3 A Rds On - Drain-Source Resistance: 950 mOhms Configuration: Single Qg - Gate Charge: 10.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 34 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPD50R950CE
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 500V 950 RDS CoolMOS Superjunction MOSFET (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 4.3 A Rds On - Drain-Source Resistance: 950 mOhms Configuration: Single Qg - Gate Charge: 10.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 34 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPD50R950CE
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 500V 950 RDS CoolMOS Superjunction MOSFET (50 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 4.3 A Rds On - Drain-Source Resistance: 950 mOhms Configuration: Single Qg - Gate Charge: 10.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 34 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPD50R950CE
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 500V 950 RDS CoolMOS Superjunction MOSFET (500 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 4.3 A Rds On - Drain-Source Resistance: 950 mOhms Configuration: Single Qg - Gate Charge: 10.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 34 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPD50R950CE
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 500V 950 RDS CoolMOS Superjunction MOSFET (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 4.3 A Rds On - Drain-Source Resistance: 950 mOhms Configuration: Single Qg - Gate Charge: 10.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 34 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPD50R950CE
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)