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IPD65R660CFD Infineon Technologies | Discrete Semiconductor Products | DigiKey Marketplace

Infineon Technologies . IPD65R660CFD

Attributes

Brand name, Manufacturer name, Attribute01, ManInfineon Technologies
ManufacturerInfineon Technologies Infineon
Attribute00Discrete Semiconductor Products
Attribute02CoolMOS? CFD2
Attribute03, packagingBulk
Attribute04Active
Attribute05N-Channel
Attribute06MOSFET (Metal Oxide)
Attribute07650 V
Attribute086A (Tc)
Attribute0910V
Attribute10660mOhm @ 2.1A, 10V
Attribute114.5V @ 200?A
Attribute1222 nC @ 10 V
Attribute13?20V
Attribute14615 pF @ 100 V
Attribute15-
Attribute1662.5W (Tc)
Attribute17-55?C ~ 150?C (TJ)
Attribute18Surface Mount
Attribute19PG-TO252-3-313
Attribute20TO-252-3, DPak (2 Leads + Tab), SC-63
AttributeKey00Category
AttributeKey01Mfr
AttributeKey02Series
AttributeKey03Package
AttributeKey04Product Status
AttributeKey05FET Type
AttributeKey06Technology
AttributeKey07Drain to Source Voltage (Vdss)
AttributeKey08Current - Continuous Drain (Id) @ 25?C
AttributeKey09Drive Voltage (Max Rds On, Min Rds On)
AttributeKey10Rds On (Max) @ Id, Vgs
AttributeKey11Vgs(th) (Max) @ Id
AttributeKey12Gate Charge (Qg) (Max) @ Vgs
AttributeKey13Vgs (Max)
AttributeKey14Input Capacitance (Ciss) (Max) @ Vds
AttributeKey15FET Feature
AttributeKey16Power Dissipation (Max)
AttributeKey17Operating Temperature
AttributeKey18Mounting Type
AttributeKey19Supplier Device Package
AttributeKey20Package / Case
Extra Product NameIPD65R660CFD Infineon Technologies | Discrete Semiconductor Products | DigiKey Marketplace
atoms, moq, multiple1
extraShipping12.0
MPN, Part Number, PartNumberIPD65R660CFD
qtyInStock827
SKU13519711
snippetN-Channel 650 V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO252-3-313
tierMinQty1390
tierPrice10.77000
ASINB00HKIM0NA
AsinB00HKIM0NA B00LWOFQHA B00LWOFTXQ B00LWOFXWI B00LWOG34K B00M2DQDMC
Brand, Label, Publisher, StudioInfineon Infineon Technologies
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPD65R660CFD X1 MS 726-IPD65R660CFD X10 MS 726-IPD65R660CFD X100 MS 726-IPD65R660CFD X5 MS 726-IPD65R660CFD X50
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 660 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 22 nC Pd - Power Dissipation: 63 W Mounting Style: SMD/SMT
FetchTime1563864797
Height69
ProductGroupBISS BISS Basic
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleIPD65R660CFD MOSFET COOLM 650V CFD PWR TRANS (1 piece) MOSFET COOLM 650V CFD PWR TRANS (10 pieces) MOSFET COOLM 650V CFD PWR TRANS (100 pieces) MOSFET COOLM 650V CFD PWR TRANS (5 pieces) MOSFET COOLM 650V CFD PWR TRANS (50 pieces)
URLhttp://ecx.images-amazon.com/images/I/41MJfLUTS3L._SL75_.jpg
Unitspixels
Width75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key1351971118271390 @ $0.77
Win SourceIPD65R660CFD1201
HotendaH184367811
1SourceIPD65R660CFD11

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IPD65R660CFD
Brand: Infineon
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberIPD65R660CFD
LabelInfineon
ManufacturerInfineon
Catalog
CategoryIndustrial & Scientific
MPNIPD65R660CFD
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET COOLM 650V CFD PWR TRANS (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 660 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 22 nC Pd - Power Dissipation: 63 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPD65R660CFD
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET COOLM 650V CFD PWR TRANS (100 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 660 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 22 nC Pd - Power Dissipation: 63 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPD65R660CFD
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET COOLM 650V CFD PWR TRANS (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 660 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 22 nC Pd - Power Dissipation: 63 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPD65R660CFD
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET COOLM 650V CFD PWR TRANS (50 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 660 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 22 nC Pd - Power Dissipation: 63 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPD65R660CFD
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET COOLM 650V CFD PWR TRANS (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 660 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 22 nC Pd - Power Dissipation: 63 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPD65R660CFD
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)