IPG20N06S4-15 INFINEON Transistors - Jotrin Electronics
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| JT25-IPG20N06S4-15 | 1 | 10000 | 1 | ||
| 825-9241 | 1 | 1 | |||
![]() swatee.com | IPG20N06S4-15 | 1 | 879 | 1 | 1 @ $3.61 |
| 1Source | IPG20N06S4-15 | 1 | 1 | ||
| Mouser | 726-IPG20N06S4-15 | 4366 | 10000 @ $0.51 | ||
| Rutronik | TMOS1046 | 5000 | 5000 @ $0.60, 10000 @ $0.59, 15000 @ $0.58, 20000 @ $0.57 | ||
| RS Components | 8259241 | 9550 | |||
| Ewing Components | IPG20N06S4-15 | 39688 | |||
| Abacus Technologies | IPG20N06S4-15 | 200 |
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MOSFET N-Channel 60V MOSFET (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 15.5 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 50 W Mounting Style: SMD/SMT Package / Case: TDSON-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPG20N06S4-15 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET N-Channel 60V MOSFET (100 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 15.5 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 50 W Mounting Style: SMD/SMT Package / Case: TDSON-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPG20N06S4-15 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET N-Channel 60V MOSFET (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 15.5 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 50 W Mounting Style: SMD/SMT Package / Case: TDSON-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPG20N06S4-15 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET N-Channel 60V MOSFET (50 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 15.5 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 50 W Mounting Style: SMD/SMT Package / Case: TDSON-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPG20N06S4-15 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET N-Channel 60V MOSFET (1 piece)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 15.5 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 50 W Mounting Style: SMD/SMT Package / Case: TDSON-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPG20N06S4-15 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
