INFINEON . IPP020N06NAKSA1
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 85X6036 | 1 | 1 | ||
 TME | IPP020N06NAKSA1 | 1 | 1 | 1 @ $4.53, 5 @ $3.91, 25 @ $3.14, 100 @ $2.72, 500 @ $2.53 | |
| RS Delivers | 906-2919P | 1 | 1 | 1 @ $5.35 | |
| Digi-Key | 3687553 | 1 | 1 | 1 @ $5.23, 10 @ $4.70, 100 @ $3.85, 500 @ $3.29 | |
| AmazonSC | B06XFT8QJM | 1 | 1 | ||
| 1Source | IPP020N06NAKSA1 | 1 | 1 | ||
| Future Electronics | 3064717 | 1 | 1 | 1 @ $2.98, 50 @ $2.68, 250 @ $2.34 |
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MOSFET
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | IPP020N06NAKSA1 |
| Manufacturer | Infineon Technologies |
MOSFET (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 2 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.8 V Qg - Gate Charge: 106 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP020N06NAKSA1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 2 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.8 V Qg - Gate Charge: 106 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP020N06NAKSA1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET (1 piece)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 2 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.8 V Qg - Gate Charge: 106 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP020N06NAKSA1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
INFINEON IPP020N06NAKSA1 Discretes mosfets N-Channel 60 V 120 A 2 mO 106 nC OptiMOS Power Transistor - TO-220 - 5 item(s)
Brand: Infineon
Single N-Channel 60 V 2 mOhm 106 nC OptiMOS Power Mosfet - TO-220-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Channel
- VoltageDraintoSource: 60 V
- Drain-sourceOnResistance-Max: 2 m?
- QgGateCharge: 106 nC
- RatedPowerDissipation(P): 3 W
Listing
| Binding | Tools & Home Improvement |
|---|---|
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Model | IPP020N06NAKSA1 |
| Part number | IPP020N06NAKSA1 |
| Items per pack | 5 |
| Label | INFINEON |
| Manufacturer | INFINEON |
Catalog
| Feature | ChannelType: N-Channel |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP020N06NAKSA1 |
| EAN | 4550034636806 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | INFINEON |
IPP020N06NAKSA1, Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube (25 Items)
Brand: Infineon