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IPP50R500CE INFINEON Transistors - Jotrin Electronics

Infineon Technologies Corporation . IPP50R500CE

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Attributes

Brand name, Manufacturer nameInfineon Technologies Corporation
ManufacturerInfineon Technologies Corporation Infineon Technologies
Attribute00, Attribute06TO-220
Attribute01MOSFET
Attribute02Green
Attribute03, qtyInStock4222
Attribute04500 mOhms
Attribute05Through Hole
Attribute07Tube
Attribute0818.7 nC
Attribute0957 W
Attribute10CoolMOS
Attribute11IPP50R500CEXKSA1
AttributeKey00Package/Case
AttributeKey01Product Categories
AttributeKey02RoHs Status
AttributeKey03In-stock
AttributeKey04Resistance Drain Source RDS (on)
AttributeKey05Mounting Style
AttributeKey06Package / Case
AttributeKey07Packaging
AttributeKey08Gate Charge Qg
AttributeKey09Power Dissipation
AttributeKey10Tradename
AttributeKey11Part # Aliases
Extra Product NameIPP50R500CE INFINEON Transistors - Jotrin Electronics
keywordsIPP50R500CE,INFINEON,TO-220,MOSFET,IPP50R500CE Datasheet PDF
moq, multiple1
MPN, Part Number, PartNumberIPP50R500CE
SKUJT25-IPP50R500CE
snippetBuy IPP50R500CE INFINEON , Learn more about IPP50R500CE MOSFET 500V 500 RDS CoolMOS Superjunction MOSFET, View the manufacturer, and stock, and datasheet pdf for the IPP50R500CE at Jotrin Electronics.
Product Group, ProductGroupBISS
AsinB00LWOGRZK B00LWOGV6A B00LWOGXTU B00M2DTH52
Brand, Label, Man, Publisher, StudioInfineon Technologies
Case, PackageQuantity1 10 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPP50R500CE X1 MS 726-IPP50R500CE X10 MS 726-IPP50R500CE X5 MS 726-IPP50R500CE X50
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 7.6 A Rds On - Drain-Source Resistance: 500 mOhms Configuration: Single Qg - Gate Charge: 18.7 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 57 W Mounting Style: Through Hole
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 5 Piece 50 Piece
TitleMOSFET 500V 500 RDS CoolMOS Superjunction MOSFET (1 piece) MOSFET 500V 500 RDS CoolMOS Superjunction MOSFET (10 pieces) MOSFET 500V 500 RDS CoolMOS Superjunction MOSFET (5 pieces) MOSFET 500V 500 RDS CoolMOS Superjunction MOSFET (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
jotrin.comJT25-IPP50R500CE142221
HotendaH1823839123011 @ $0.94, 10 @ $0.84, 100 @ $0.65, 500 @ $0.54
1SourceIPP50R500CE11
Digi-KeyIPP50R500CEIN-ND15001 @ $1.03, 10 @ $0.92, 100 @ $0.72

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MOSFET 500V 500 RDS CoolMOS Superjunction MOSFET (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 7.6 A Rds On - Drain-Source Resistance: 500 mOhms Configuration: Single Qg - Gate Charge: 18.7 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 57 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPP50R500CE
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 500V 500 RDS CoolMOS Superjunction MOSFET (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 7.6 A Rds On - Drain-Source Resistance: 500 mOhms Configuration: Single Qg - Gate Charge: 18.7 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 57 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPP50R500CE
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 500V 500 RDS CoolMOS Superjunction MOSFET (50 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 7.6 A Rds On - Drain-Source Resistance: 500 mOhms Configuration: Single Qg - Gate Charge: 18.7 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 57 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPP50R500CE
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 500V 500 RDS CoolMOS Superjunction MOSFET (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 7.6 A Rds On - Drain-Source Resistance: 500 mOhms Configuration: Single Qg - Gate Charge: 18.7 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 57 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPP50R500CE
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)