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INFINEON . IPP60R190E6XKSA1

INFINEON . IPP60R190E6XKSA1

Attributes

Brand name, Manufacturer nameINFINEON
ManufacturerINFINEON Infineon Technologies
extendedQty, qtyInStock0
moq, multiple1
MPNIPP60R190E6XKSA1 IPP60R190E6
qtySourceupdateFromUrlEntry
Part Number, PartNumberIPP60R190E6
Product Group, ProductGroupBISS
AsinB00LWOKSEQ B00LWOKW0Q B00M2DVV88
Brand, Label, Man, Publisher, StudioInfineon Technologies
Case, PackageQuantity1 10 5
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPP60R190E6 X1 MS 726-IPP60R190E6 X10 MS 726-IPP60R190E6 X5
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20.2 A Rds On - Drain-Source Resistance: 170 mOhms Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 151 W Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 5 Piece
TitleMOSFET N-CH 650V 20.2A (1 piece) MOSFET N-CH 650V 20.2A (10 pieces) MOSFET N-CH 650V 20.2A (5 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark50Y206811
jotrin.comJT25-IPP60R190E61115001
americanmicrosemi.comIPP60R190E611
TMEIPP60R190E6XKSA1111 @ $2.81, 3 @ $2.42, 10 @ $1.94, 100 @ $1.69
Digi-Key25230451200011 @ $4.45, 10 @ $3.99, 100 @ $3.27, 500 @ $2.79, 1000 @ $2.35, 2000 @ $2.23, 5000 @ $2.15
iodPartsIPP60R190E6XKSA111
Future Electronics3067155500500500 @ $2.23, 1000 @ $1.82, 1500 @ $1.80, 2000 @ $1.79
HotendaH181833218911 @ $2.66, 10 @ $2.39, 100 @ $1.96, 500 @ $1.67
Win SourceIPP60R190E61031781010 @ $5.37, 25 @ $4.03, 85 @ $3.63
1SourceIPP60R190E611
Digi-KeyIPP60R190E6-ND15001 @ $3.11, 10 @ $2.80, 100 @ $2.25, 500 @ $1.85, 1000 @ $1.53

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MOSFET N-CH 650V 20.2A (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20.2 A Rds On - Drain-Source Resistance: 170 mOhms Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 151 W Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNIPP60R190E6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET N-CH 650V 20.2A (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20.2 A Rds On - Drain-Source Resistance: 170 mOhms Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 151 W Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNIPP60R190E6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET N-CH 650V 20.2A (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 20.2 A Rds On - Drain-Source Resistance: 170 mOhms Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 151 W Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNIPP60R190E6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)