Infineon . IPP60R250CP
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 33P7177 | 1 | 1 | ||
| JT25-IPP60R250CP | 1 | 12718 | 1 | ||
![]() Radwell | IPP60R250CP | 1 | 7 | 1 | |
![]() swatee.com | IPP60R250CP | 1 | 205 | 1 | 1 @ $6.13 |
| Win Source | IPP60R250CP | 1 | 555 | 1 | |
| Hotenda | H1816781 | 1 | 1865 | 1 | 1 @ $3.02, 10 @ $2.71, 100 @ $2.22, 500 @ $1.89 |
| 1Source | IPP60R250CP | 1 | 1 |
Related on Amazon
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MOSFET COOL MOS N-CH 650V 11A (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 250 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 104 W Mounting Style: Through Hole Package / Case: TO-220-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP60R250CP |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS N-CH 650V 11A (100 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 250 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 104 W Mounting Style: Through Hole Package / Case: TO-220-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP60R250CP |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS N-CH 650V 11A (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 250 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 104 W Mounting Style: Through Hole Package / Case: TO-220-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP60R250CP |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS N-CH 650V 11A (50 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 250 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 104 W Mounting Style: Through Hole Package / Case: TO-220-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP60R250CP |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
IPP60R250CP
Brand: Infineon
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | IPP60R250CP |
| Label | Infineon |
| Manufacturer | Infineon |
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 250 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 104 W Mounting Style: Through Hole Package / Case: TO-220-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP60R250CP |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |

