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IPP60R280E6 Infineon Technologies | Discrete Semiconductor Products | DigiKey Marketplace

Infineon Technologies . IPP60R280E6

Attributes

Brand name, Manufacturer name, Attribute01, ManInfineon Technologies
ManufacturerInfineon Technologies Infineon
Attribute00Discrete Semiconductor Products
Attribute02*
Attribute03, packagingBulk
Attribute04Active
AttributeKey00Category
AttributeKey01Mfr
AttributeKey02Series
AttributeKey03Package
AttributeKey04Product Status
Extra Product NameIPP60R280E6 Infineon Technologies | Discrete Semiconductor Products | DigiKey Marketplace
atoms, moq, multiple1
extraShipping12.0
MPN, Part Number, PartNumberIPP60R280E6
qtyInStock0
SKU12597940
snippetMosfet Array
tierMinQty1252
tierPrice11.19000
Product GroupBISS
ASINB00M2DWPCE
AsinB00LWOMBMS B00LWOMGMS B00LWOMJCA B00M2DWPCE
Brand, Label, Publisher, StudioInfineon Infineon Technologies
Case, PackageQuantity1 10 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPP60R280E6 X1 MS 726-IPP60R280E6 X10 MS 726-IPP60R280E6 X5 MS 726-IPP60R280E6 X50
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 13.8 A Rds On - Drain-Source Resistance: 250 mOhms Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 104 W Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube
FetchTime1566833893
Height49
ProductGroupBISS BISS Basic
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 5 Piece 50 Piece
TitleIPP60R280E6 MOSFET N-CH 650V 13.8A (1 piece) MOSFET N-CH 650V 13.8A (10 pieces) MOSFET N-CH 650V 13.8A (5 pieces) MOSFET N-CH 650V 13.8A (50 pieces)
URLhttp://ecx.images-amazon.com/images/I/213UQW7JCSL._SL75_.jpg
Unitspixels
Width75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key1259794011252 @ $1.19
swatee.comIPP60R280E6116011 @ $6.35
HotendaH183268311
Win SourceIPP60R280E6160001
1SourceIPP60R280E611

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MOSFET N-CH 650V 13.8A (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 13.8 A Rds On - Drain-Source Resistance: 250 mOhms Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 104 W Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNIPP60R280E6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET N-CH 650V 13.8A (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 13.8 A Rds On - Drain-Source Resistance: 250 mOhms Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 104 W Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNIPP60R280E6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET N-CH 650V 13.8A (50 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 13.8 A Rds On - Drain-Source Resistance: 250 mOhms Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 104 W Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNIPP60R280E6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
IPP60R280E6
Brand: Infineon
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberIPP60R280E6
LabelInfineon
ManufacturerInfineon
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 13.8 A Rds On - Drain-Source Resistance: 250 mOhms Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 104 W Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNIPP60R280E6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)