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INFINEON TECHNOLOGIES IPP65R280E6XKSA1 | Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3

INFINEON TECHNOLOGIES . IPP65R280E6XKSA1

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Attributes

Brand name, Manufacturer name, Attribute00INFINEON TECHNOLOGIES
ManufacturerINFINEON TECHNOLOGIES Infineon Technologies
Attribute01N-MOSFET
Attribute02CoolMOS?
Attribute03unipolar
Attribute04650V
Attribute0513.8A
Attribute06104W
Attribute07PG-TO220-3
Attribute08?20V
Attribute090.28?
Attribute10THT
Attribute11tube
Attribute12enhanced
AttributeKey00Manufacturer
AttributeKey01Type of transistor
AttributeKey02Technology
AttributeKey03Polarisation
AttributeKey04Drain-source voltage
AttributeKey05Drain current
AttributeKey06Power dissipation
AttributeKey07Case
AttributeKey08Gate-source voltage
AttributeKey09On-state resistance
AttributeKey10Mounting
AttributeKey11Kind of package
AttributeKey12Kind of channel
CategoryL1Semiconductors
CategoryL2Transistors
CategoryL3Unipolar transistors
CategoryL4N channel transistors
Extra Product NameINFINEON TECHNOLOGIES IPP65R280E6XKSA1 | Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
atoms, moq, multiple, tierMinQty11
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jsonUrlData22bb7d652b36df0799711
keywordsINFINEON TECHNOLOGIES, IPP65R280E6XKSA1
MPNIPP65R280E6XKSA1 IPP65R280E6
qtyInStock0
SKUIPP65R280E6XKSA1
snippetINFINEON TECHNOLOGIES IPP65R280E6XKSA1 | Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-
tierMinQty23
tierMinQty310
tierMinQty450
tierPrice12.46
tierPrice22.21
tierPrice31.96
tierPrice41.7
Part Number, PartNumberIPP65R280E6
Product Group, ProductGroupBISS
AsinB00LWORP5Q B00LWORRUO B00M2DZ8I2
Brand, Label, Man, Publisher, StudioInfineon Technologies
Case, PackageQuantity1 10 5
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPP65R280E6 X1 MS 726-IPP65R280E6 X10 MS 726-IPP65R280E6 X5
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 13.8 A Rds On - Drain-Source Resistance: 250 mOhms Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 104 W Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 5 Piece
TitleMOSFET N-CH 700V 13.8A (1 piece) MOSFET N-CH 700V 13.8A (10 pieces) MOSFET N-CH 700V 13.8A (5 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
TMEIPP65R280E6XKSA1111 @ $2.46, 3 @ $2.21, 10 @ $1.96, 50 @ $1.70
Little DiodeIPP65R280E6111 @ $0.00
RS Delivers897-759511
Digi-Key1209802311
Digi-Key252305211
swatee.comIPP65R280E612811 @ $7.00
Win SourceIPP65R280E61659161
HotendaH18244691211 @ $2.39, 10 @ $2.15, 100 @ $1.73, 500 @ $1.42
1SourceIPP65R280E611

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MOSFET N-CH 700V 13.8A (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 13.8 A Rds On - Drain-Source Resistance: 250 mOhms Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 104 W Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNIPP65R280E6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET N-CH 700V 13.8A (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 13.8 A Rds On - Drain-Source Resistance: 250 mOhms Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 104 W Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNIPP65R280E6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET N-CH 700V 13.8A (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 13.8 A Rds On - Drain-Source Resistance: 250 mOhms Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 104 W Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNIPP65R280E6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)