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IPP77N06S3-09 Infineon Technologies | Discrete Semiconductor Products | DigiKey Marketplace

Infineon Technologies . IPP77N06S3-09

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Attributes

Brand name, Manufacturer name, Manufacturer, Attribute01, Attribute06, Brand, Label, Man, Publisher, StudioInfineon Technologies
Attribute00IPP77N06S3-09IN-ND
Attribute02, MPN, Part Number, PartNumberIPP77N06S3-09
Attribute03MOSFET N-CH 55V 77A TO220-3
Attribute04, snippetN-Channel 55 V 77A (Tc) 107W (Tc) Through Hole PG-TO220-3-1
Attribute05, CategoryL1Discrete Semiconductor Products
Attribute07OptiMOS?
Attribute08Tube
Attribute09Obsolete
Attribute10N-Channel
Attribute11MOSFET (Metal Oxide)
Attribute1255 V
Attribute1377A (Tc)
Attribute1410V
Attribute159.1mOhm @ 39A, 10V
Attribute164V @ 55?A
Attribute17103 nC @ 10 V
Attribute18?20V
Attribute195335 pF @ 25 V
Attribute20-
Attribute21107W (Tc)
Attribute22-55?C ~ 175?C (TJ)
Attribute23Through Hole
Attribute24PG-TO220-3-1
Attribute25TO-220-3
Attribute26IPP77N
AttributeKey00Digi-Key Part Number
AttributeKey01Manufacturer
AttributeKey02Manufacturer Product Number
AttributeKey03Description
AttributeKey04Detailed Description
AttributeKey05Category
AttributeKey06Mfr
AttributeKey07Series
AttributeKey08Package
AttributeKey09Product Status
AttributeKey10FET Type
AttributeKey11Technology
AttributeKey12Drain to Source Voltage (Vdss)
AttributeKey13Current - Continuous Drain (Id) @ 25?C
AttributeKey14Drive Voltage (Max Rds On, Min Rds On)
AttributeKey15Rds On (Max) @ Id, Vgs
AttributeKey16Vgs(th) (Max) @ Id
AttributeKey17Gate Charge (Qg) (Max) @ Vgs
AttributeKey18Vgs (Max)
AttributeKey19Input Capacitance (Ciss) (Max) @ Vds
AttributeKey20FET Feature
AttributeKey21Power Dissipation (Max)
AttributeKey22Operating Temperature
AttributeKey23Mounting Type
AttributeKey24Supplier Device Package
AttributeKey25Package / Case
AttributeKey26Base Product Number
CategoryL2Transistors
CategoryL3FETs, MOSFETs
Extra Product NameIPP77N06S3-09 Infineon Technologies | Discrete Semiconductor Products | DigiKey Marketplace
atoms, moq, multiple1
extraShipping12.0
qtyInStock0
SKU1282067
Product Group, ProductGroupBISS
AsinB00LWOTYZK B00LWOU26A B00LWOU5TE B00M2DFHGK
Case, PackageQuantity1 10 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPP77N06S3-09 X1 MS 726-IPP77N06S3-09 X10 MS 726-IPP77N06S3-09 X5 MS 726-IPP77N06S3-09 X50
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 77 A Rds On - Drain-Source Resistance: 9.1 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 107 W Mounting Style: Through Hole Package / Case: TO-220-3
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 5 Piece 50 Piece
TitleMOSFET N-CH 55V 77A (1 piece) MOSFET N-CH 55V 77A (10 pieces) MOSFET N-CH 55V 77A (5 pieces) MOSFET N-CH 55V 77A (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key128206711
swatee.comIPP77N06S3-09122711 @ $2.60
HotendaH184211811
1SourceIPP77N06S3-0911
Rochester ElectronicsIPP77N06S3-094601 @ $0.60, 25 @ $0.56, 100 @ $0.53, 500 @ $0.51, 1000 @ $0.49
Ewing ComponentsIPP77N06S3-0939688
Abacus TechnologiesIPP77N06S3-09567

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MOSFET N-CH 55V 77A (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 77 A Rds On - Drain-Source Resistance: 9.1 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 107 W Mounting Style: Through Hole Package / Case: TO-220-3
CategoryIndustrial & Scientific
MPNIPP77N06S3-09
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET N-CH 55V 77A (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 77 A Rds On - Drain-Source Resistance: 9.1 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 107 W Mounting Style: Through Hole Package / Case: TO-220-3
CategoryIndustrial & Scientific
MPNIPP77N06S3-09
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET N-CH 55V 77A (50 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 77 A Rds On - Drain-Source Resistance: 9.1 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 107 W Mounting Style: Through Hole Package / Case: TO-220-3
CategoryIndustrial & Scientific
MPNIPP77N06S3-09
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET N-CH 55V 77A (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 77 A Rds On - Drain-Source Resistance: 9.1 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 107 W Mounting Style: Through Hole Package / Case: TO-220-3
CategoryIndustrial & Scientific
MPNIPP77N06S3-09
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)