Infineon Technologies . IPP80N03S4L-03
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Win Source | IPP80N03S4L-03 | 1 | 5015 | 1 | |
| Hotenda | H1818038 | 1 | 1000 | 1 | 1 @ $1.45, 10 @ $1.30, 100 @ $1.01, 500 @ $0.84 |
| 1Source | IPP80N03S4L-03 | 1 | 1 | ||
| Digi-Key | IPP80N03S4L-03-ND | 1 | 500 | 1 @ $1.59, 10 @ $1.42, 100 @ $1.11, 500 @ $0.91, 1000 @ $0.72 |
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MOSFET OPTIMOS-T2 PWR-TRANS 30V 80A (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 16 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 2.7 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 136 W Mounting Style: Through Hole Package / Case: TO-220-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP80N03S4L-03 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET OPTIMOS-T2 PWR-TRANS 30V 80A (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 16 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 2.7 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 136 W Mounting Style: Through Hole Package / Case: TO-220-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP80N03S4L-03 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET OPTIMOS-T2 PWR-TRANS 30V 80A (50 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 16 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 2.7 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 136 W Mounting Style: Through Hole Package / Case: TO-220-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP80N03S4L-03 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET OPTIMOS-T2 PWR-TRANS 30V 80A (1 piece)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 16 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 2.7 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 136 W Mounting Style: Through Hole Package / Case: TO-220-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP80N03S4L-03 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |