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Infineon Power Mosfet, N Channel, 83.2 A, 650 V, 0.033 Ohm, 10 V, 3 V Rohs Compliant: Yes - IPW65R037C6FKSA1

INFINEON . IPW65R037C6FKSA1

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Attributes

Brand name, Manufacturer nameINFINEON
ManufacturerINFINEON Infineon Technologies
CategoryL1Semiconductors - Discretes
CategoryL2FETs
CategoryL3Single MOSFETs
Extra Product NameInfineon Power Mosfet, N Channel, 83.2 A, 650 V, 0.033 Ohm, 10 V, 3 V Rohs Compliant: Yes - IPW65R037C6FKSA1
jsonUrlDataSemiconductors - Discretes > FETs > Single MOSFETs
moq, multiple, tierMinQty1, Case, PackageQuantity1
MPNIPW65R037C6FKSA1 IPW65R037C6
qtyInStock484
SKU50Y2087
tierMinQty210
tierMinQty325
tierMinQty450
tierMinQty5100
tierMinQty6480
tierMinQty7720
tierPrice119.22
tierPrice217.15
tierPrice316.74
tierPrice415.92
tierPrice515.14
tierPrice614.62
tierPrice713.85
urlhttps://www.newark.com/50Y2087?CMP=AFC-DATAALCHEMY
Part Number, PartNumberIPW65R037C6
Product Group, ProductGroupBISS
AsinB00HKHYIHM
Brand, Label, Man, Publisher, StudioInfineon Technologies
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPW65R037C6
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Id - Continuous Drain Current: 83.2 A Rds On - Drain-Source Resistance: 37 mOhms Vgs th - Gate-Source Threshold Voltage: 3.5 V Qg - Gate Charge: 330 nC Pd - Power Dissipation: 500 W Mounting Style: Through Hole Package / Case: TO-247-3 Packaging: Tube
ProductTypeNameELECTRONIC_COMPONENT
TitleMOSFET

Distributor offers

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Newark50Y2087148411 @ $19.22, 10 @ $17.15, 25 @ $16.74, 50 @ $15.92, 100 @ $15.14, 480 @ $14.62, 720 @ $13.85
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Mouser726-IPW65R037C67201 @ $14.47, 10 @ $13.31, 50 @ $12.06, 100 @ $11.24, 1000 @ $9.95, 10000 @ $9.95
element14 APAC24808741561 @ $16.15, 25 @ $15.59, 100 @ $14.74, 500 @ $14.22, 960 @ $13.45, 1920 @ $12.90
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Abacus TechnologiesIPW65R037C6200
Ewing ComponentsIPW65R037C639688

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MOSFET
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Id - Continuous Drain Current: 83.2 A Rds On - Drain-Source Resistance: 37 mOhms Vgs th - Gate-Source Threshold Voltage: 3.5 V Qg - Gate Charge: 330 nC Pd - Power Dissipation: 500 W Mounting Style: Through Hole Package / Case: TO-247-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNIPW65R037C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
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