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INFINEON TECHNOLOGIES IPW65R190C6FKSA1 | Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO247-3

INFINEON TECHNOLOGIES . IPW65R190C6FKSA1

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Attributes

Brand name, Manufacturer name, Attribute00INFINEON TECHNOLOGIES
ManufacturerINFINEON TECHNOLOGIES Infineon Infineon Technologies
Attribute01N-MOSFET
Attribute02CoolMOS?
Attribute03unipolar
Attribute04650V
Attribute0520.2A
Attribute06151W
Attribute07PG-TO247-3
Attribute08?20V
Attribute090.19?
Attribute10THT
Attribute11tube
Attribute12enhanced
AttributeKey00Manufacturer
AttributeKey01Type of transistor
AttributeKey02Technology
AttributeKey03Polarisation
AttributeKey04Drain-source voltage
AttributeKey05Drain current
AttributeKey06Power dissipation
AttributeKey07Case
AttributeKey08Gate-source voltage
AttributeKey09On-state resistance
AttributeKey10Mounting
AttributeKey11Kind of package
AttributeKey12Kind of channel
CategoryL1Semiconductors
CategoryL2Transistors
CategoryL3Unipolar transistors
CategoryL4N channel transistors
Extra Product NameINFINEON TECHNOLOGIES IPW65R190C6FKSA1 | Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO247-3
atoms, moq, multiple1
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jsonUrlData2f7b3843e92dbe80f3e70
keywordsINFINEON TECHNOLOGIES, IPW65R190C6FKSA1
MPNIPW65R190C6FKSA1 IPW65R190C6
qtyInStock0
SKUIPW65R190C6FKSA1
snippetINFINEON TECHNOLOGIES IPW65R190C6FKSA1 | Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO247-
Part Number, PartNumberIPW65R190C6
Product GroupBISS
ASINB00M2DMBBY
AsinB00LWO42WA B00LWO44B4 B00M2DMBBY
Brand, Label, Publisher, StudioInfineon Infineon Technologies
Case, PackageQuantity1 10 5
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPW65R190C6 X1 MS 726-IPW65R190C6 X10 MS 726-IPW65R190C6 X5
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 20.2 A Rds On - Drain-Source Resistance: 190 mOhms Configuration: Single Qg - Gate Charge: 73 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 151 W Mounting Style: Through Hole
FetchTime1567658766
Height75
ManInfineon Technologies
ProductGroupBISS BISS Basic
ProductTypeNameELECTRONIC_COMPONENT HARDWARE
Size1 Piece 10 Piece 5 Piece
TitleIPW65R190C6 MOSFET COOL MOS (1 piece) MOSFET COOL MOS (10 pieces) MOSFET COOL MOS (5 pieces)
URLhttp://ecx.images-amazon.com/images/I/11iNaRpLgdL._SL75_.jpg
Unitspixels pounds
Weight0.0440924524000
Width60

Distributor offers

SellerSKUMOQIn stockMultiplePrices
TMEIPW65R190C6FKSA111
Digi-Key278359911
Digi-Key12099715173310173173 @ $1.74
Digi-Key115362601454320145145 @ $1.73
HotendaH183292611
1SourceIPW65R190C611

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MOSFET COOL MOS (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 20.2 A Rds On - Drain-Source Resistance: 190 mOhms Configuration: Single Qg - Gate Charge: 73 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 151 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPW65R190C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET COOL MOS (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 20.2 A Rds On - Drain-Source Resistance: 190 mOhms Configuration: Single Qg - Gate Charge: 73 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 151 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPW65R190C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
IPW65R190C6
Brand: Infineon
Listing
Product groupBISS Basic
Product typeHARDWARE
Part numberIPW65R190C6
LabelInfineon
ManufacturerInfineon
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 700 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 20.2 A Rds On - Drain-Source Resistance: 190 mOhms Configuration: Single Qg - Gate Charge: 73 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 151 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPW65R190C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)