international-rectifier . IRF2907ZS-7PPBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 58K5756 | 1 | 1 | ||
| IRF2907ZS7PPBF | 1 | 1 | |||
| 1Source | IRF2907ZS-7PPBF | 1 | 1 | ||
 Radwell | IRF2907ZS-7PPBF | 1 | 1 | ||
| Hotenda | H1810885 | 1 | 9193 | 1 | 1 @ $4.82, 10 @ $4.33, 100 @ $3.55, 500 @ $3.02 |
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MOSFET 75V 1 N-CH HEXFET 3.8mOhms 170nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 75 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 180 A Rds On - Drain-Source Resistance: 3.8 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 170 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF2907ZS-7PPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 75V 1 N-CH HEXFET 3.8mOhms 170nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 75 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 180 A Rds On - Drain-Source Resistance: 3.8 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 170 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF2907ZS-7PPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 75V 1 N-CH HEXFET 3.8mOhms 170nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 75 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 180 A Rds On - Drain-Source Resistance: 3.8 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 170 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF2907ZS-7PPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 75V 1 N-CH HEXFET 3.8mOhms 170nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 75 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 180 A Rds On - Drain-Source Resistance: 3.8 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 170 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF2907ZS-7PPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |