INTERNATIONAL RECTIFIER . IRF3704ZSPBF
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| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Radwell | IRF3704ZSPBF | 1 | 1 | ||
| 1Source | IRF3704ZSPBF | 1 | 1 | ||
| Digi-Key | 13436915 | 1 | 1 | 1 @ $0.75 | |
| swatee.com | IRF3704ZSPBF | 1 | 296 | 1 | 1 @ $3.14 |
| Hotenda | H1814162 | 1 | 1 |
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MOSFET 20V 1 N-CH HEXFET 11.1mOhms 8.7nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 67 A Rds On - Drain-Source Resistance: 11.1 mOhms Configuration: Single Qg - Gate Charge: 8.7 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 57 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF3704ZSPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 20V 1 N-CH HEXFET 11.1mOhms 8.7nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 67 A Rds On - Drain-Source Resistance: 11.1 mOhms Configuration: Single Qg - Gate Charge: 8.7 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 57 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF3704ZSPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 20V 1 N-CH HEXFET 11.1mOhms 8.7nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 67 A Rds On - Drain-Source Resistance: 11.1 mOhms Configuration: Single Qg - Gate Charge: 8.7 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 57 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF3704ZSPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 20V 1 N-CH HEXFET 11.1mOhms 8.7nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 67 A Rds On - Drain-Source Resistance: 11.1 mOhms Configuration: Single Qg - Gate Charge: 8.7 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 57 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF3704ZSPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 20V 1 N-CH HEXFET 11.1mOhms 8.7nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 67 A Rds On - Drain-Source Resistance: 11.1 mOhms Configuration: Single Qg - Gate Charge: 8.7 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 57 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF3704ZSPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |