Vishay Mosfet Transistor, N Channel, 28 A, 100 V, 77 Mohm, 10 V, 4 V Rohs Compliant: Yes - IRF540SPBF

Single N-Channel 100 V 77 mOhms Surface Mount Power Mosfet - D2PAK-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 SVHC: Yes SVHC Exceeds Threshold: Yes Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 100 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Operating Junction Temperature (°C): -55 to 175 Maximum Continuous Drain Current (A): 28 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 25 Maximum Drain Source Resistance (mOhm): 77@10V Typical Gate Charge @ Vgs (nC): 72(Max)@10V Typical Gate Charge @ 10V (nC): 72(Max) Typical Gate to Drain Charge (nC): 32(Max) Typical Gate to Source Charge (nC): 11(Max) Typical Reverse Recovery Charge (nC): 1300 Typical Input Capacitance @ Vds (pF): 1700@25V Typical Reverse Transfer Capacitance @ Vds (pF): 120@25V Minimum Gate Threshold Voltage (V): 2 Typical Output Capacitance (pF): 560 Maximum Power Dissipation (mW): 3700 Typical Fall Time (ns): 43 Typical Rise Time (ns): 44 Typical Turn-Off Delay Time (ns): 53 Typical Turn-On Delay Time (ns): 11 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 175 Maximum Positive Gate Source Voltage (V): 20 Maximum Power Dissipation on PCB @ TC=25°C (W): 3.7 Maximum Pulsed Drain Current @ TC=25°C (A): 110 Typical Gate Plateau Voltage (V): 5.8 Typical Reverse Recovery Time (ns): 180 Maximum Diode Forward Voltage (V): 2.5 Pin Count: 3 Standard Package Name: TO-263 Supplier Package: D2PAK Mounting: Surface Mount Package Height: 4.83(Max) Package Length: 10.41(Max) Package Width: 9.65(Max) PCB changed: 2 Tab: Tab Lead Shape: Gull-wing