Vishay Mosfet Transistor, N Channel, 5.2 A, 200 V, 800 Mohm, 10 V, 4 V Rohs Compliant: Yes - IRF620PBF

N CHANNEL MOSFET, 200V, 5.2A TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5.2A; On Resistance Rds(on):0.8ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

Single N-Channel 200 V 0.8 Ohms Flange Mount Power Mosfet - TO-220AB ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 200 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 5.2 Maximum Drain Source Resistance (mOhm): 800@10V Typical Gate Charge @ Vgs (nC): 14(Max)@10V Typical Gate Charge @ 10V (nC): 14(Max) Typical Input Capacitance @ Vds (pF): 260@25V Maximum Power Dissipation (mW): 50000 Typical Fall Time (ns): 13 Typical Rise Time (ns): 22 Typical Turn-Off Delay Time (ns): 19 Typical Turn-On Delay Time (ns): 7.2 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Pin Count: 3 Standard Package Name: TO-220 Supplier Package: TO-220AB Mounting: Through Hole Package Height: 9.01(Max) Package Length: 10.41(Max) Package Width: 4.7(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole