international-rectifier . IRF630NLPBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 63J7337 | 1 | 1 | ||
 Radwell | IRF630NLPBF | 1 | 1 | ||
| 1Source | IRF630NLPBF | 1 | 1 | ||
 swatee.com | IRF630NLPBF | 1 | 330 | 1 | 1 @ $3.71 |
| Hotenda | H1824827 | 1 | 1 |
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MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 9.3 A Rds On - Drain-Source Resistance: 300 mOhms Configuration: Single Qg - Gate Charge: 23.3 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 82 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF630NLPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 9.3 A Rds On - Drain-Source Resistance: 300 mOhms Configuration: Single Qg - Gate Charge: 23.3 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 82 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF630NLPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 9.3 A Rds On - Drain-Source Resistance: 300 mOhms Configuration: Single Qg - Gate Charge: 23.3 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 82 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF630NLPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 9.3 A Rds On - Drain-Source Resistance: 300 mOhms Configuration: Single Qg - Gate Charge: 23.3 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 82 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF630NLPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 9.3 A Rds On - Drain-Source Resistance: 300 mOhms Configuration: Single Qg - Gate Charge: 23.3 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 82 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF630NLPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |