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international-rectifier . IRF640NSTRRPBF

international-rectifier . IRF640NSTRRPBF

Attributes

Brand name, Manufacturer nameinternational-rectifier
Manufacturerinternational-rectifier International Rectifier
extendedQty, qtyInStock0
moq, multiple1
MPN, Part Number, PartNumberIRF640NSTRRPBF
qtySourceupdateFromUrlEntry
Product Group, ProductGroupBISS
AsinB00LWM0EG0 B00LWM0GKO B00LWM0I7A B00LWM0KG4 B00M2D3ITI
Brand, Label, Man, Publisher, StudioInternational Rectifier
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 942-IRF640NSTRRPBF X1 MS 942-IRF640NSTRRPBF X10 MS 942-IRF640NSTRRPBF X100 MS 942-IRF640NSTRRPBF X5 MS 942-IRF640NSTRRPBF X50
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 18 A Rds On - Drain-Source Resistance: 150 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 44.7 nC Maximum Operating Temperature: + 175 C
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC (1 piece) MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC (10 pieces) MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC (100 pieces) MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC (5 pieces) MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark63J735411
RadwellIRF640NSTRRPBF800800
1SourceIRF640NSTRRPBF11
Digi-Key1261169311504 @ $0.50
HotendaH1816664800800800800 @ $0.70
STLAA.comIRF640NSTRRPBF8640
Ewing ComponentsIRF640NSTRRPBF39688
Abacus TechnologiesIRF640NSTRRPBF1973

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MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC (10 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 18 A Rds On - Drain-Source Resistance: 150 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 44.7 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRF640NSTRRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC (100 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 18 A Rds On - Drain-Source Resistance: 150 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 44.7 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRF640NSTRRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC (5 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 18 A Rds On - Drain-Source Resistance: 150 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 44.7 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRF640NSTRRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC (50 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 18 A Rds On - Drain-Source Resistance: 150 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 44.7 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRF640NSTRRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC (1 piece)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 18 A Rds On - Drain-Source Resistance: 150 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 44.7 nC Maximum Operating Temperature: + 175 C
CategoryIndustrial & Scientific
MPNIRF640NSTRRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)