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INTERNATIONAL RECTIFIER . IRF6811STR1PBF

INTERNATIONAL RECTIFIER . IRF6811STR1PBF

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Attributes

Brand name, Manufacturer nameINTERNATIONAL RECTIFIER
ManufacturerINTERNATIONAL RECTIFIER International Rectifier
moq, multiple1000
MPN, SKU, Part Number, PartNumberIRF6811STR1PBF
qtyInStock0
AsinB00HKZEAUY B00LWL7PCM B00LWL7T5A B00LWL7XD8 B00LWL80EE B00M2CJU46
Brand, Label, Man, Publisher, StudioInternational Rectifier
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 942-IRF6811STR1PBF X1 MS 942-IRF6811STR1PBF X10 MS 942-IRF6811STR1PBF X100 MS 942-IRF6811STR1PBF X5 MS 942-IRF6811STR1PBF X50
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 74 A Rds On - Drain-Source Resistance: 5.4 mOhms Configuration: Single Dual Drain Qg - Gate Charge: 11 nC Pd - Power Dissipation: 32 W Package / Case: DirectFET-6 SQ Packaging: Reel
ProductGroupBISS
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET 25V 1 N-CH HEXFET 3.7mOhms 11nC (1 piece) MOSFET 25V 1 N-CH HEXFET 3.7mOhms 11nC (10 pieces) MOSFET 25V 1 N-CH HEXFET 3.7mOhms 11nC (100 pieces) MOSFET 25V 1 N-CH HEXFET 3.7mOhms 11nC (5 pieces) MOSFET 25V 1 N-CH HEXFET 3.7mOhms 11nC (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
RadwellIRF6811STR1PBF10001000
1SourceIRF6811STR1PBF11
i-componentsIRF6811STR1PBF152671
HotendaH184070311
TMEIRF6811STR1PBF11
Mouser942-IRF6811STR1PBF1641 @ $2.60, 10 @ $1.38, 50 @ $1.38, 100 @ $1.22, 1000 @ $1.09, 10000 @ $1.00
STLAA.comIRF6811STR1PBF1200
Abacus TechnologiesIRF6811STR1PBF1233

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MOSFET 25V 1 N-CH HEXFET 3.7mOhms 11nC (10 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 74 A Rds On - Drain-Source Resistance: 5.4 mOhms Configuration: Single Dual Drain Qg - Gate Charge: 11 nC Pd - Power Dissipation: 32 W Package / Case: DirectFET-6 SQ Packaging: Reel
CategoryIndustrial & Scientific
MPNIRF6811STR1PBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 25V 1 N-CH HEXFET 3.7mOhms 11nC (100 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 74 A Rds On - Drain-Source Resistance: 5.4 mOhms Configuration: Single Dual Drain Qg - Gate Charge: 11 nC Pd - Power Dissipation: 32 W Package / Case: DirectFET-6 SQ Packaging: Reel
CategoryIndustrial & Scientific
MPNIRF6811STR1PBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 25V 1 N-CH HEXFET 3.7mOhms 11nC (5 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 74 A Rds On - Drain-Source Resistance: 5.4 mOhms Configuration: Single Dual Drain Qg - Gate Charge: 11 nC Pd - Power Dissipation: 32 W Package / Case: DirectFET-6 SQ Packaging: Reel
CategoryIndustrial & Scientific
MPNIRF6811STR1PBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 25V 1 N-CH HEXFET 3.7mOhms 11nC (50 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 74 A Rds On - Drain-Source Resistance: 5.4 mOhms Configuration: Single Dual Drain Qg - Gate Charge: 11 nC Pd - Power Dissipation: 32 W Package / Case: DirectFET-6 SQ Packaging: Reel
CategoryIndustrial & Scientific
MPNIRF6811STR1PBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 25V 1 N-CH HEXFET 3.7mOhms 11nC (1 piece)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 74 A Rds On - Drain-Source Resistance: 5.4 mOhms Configuration: Single Dual Drain Qg - Gate Charge: 11 nC Pd - Power Dissipation: 32 W Package / Case: DirectFET-6 SQ Packaging: Reel
CategoryIndustrial & Scientific
MPNIRF6811STR1PBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)