international-rectifier . IRF6894MTR1PBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 54T9257 | 1 | 1 | ||
| Freelance Electronics | IRF6894MTR1PBF | 1 | 1310 | 1 | 1 @ $12.44, 21 @ $9.89, 51 @ $9.33, 108 @ $8.67, 231 @ $7.73 |
| 1Source | IRF6894MTR1PBF | 1 | 1 | ||
 Radwell | IRF6894MTR1PBF | 1000 | 1000 | ||
| Hotenda | H1840706 | 1 | 1 | ||
 TME | IRF6894MTR1PBF | 1 | 1 |
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MOSFET 25V 1 N-CH HEXFET 1.3mOhms 26nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 170 A Rds On - Drain-Source Resistance: 1.7 mOhms Configuration: Single Dual Drain Dual Source Qg - Gate Charge: 29 nC Pd - Power Dissipation: 54 W Package / Case: DirectFET-7 MX |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF6894MTR1PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 25V 1 N-CH HEXFET 1.3mOhms 26nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 170 A Rds On - Drain-Source Resistance: 1.7 mOhms Configuration: Single Dual Drain Dual Source Qg - Gate Charge: 29 nC Pd - Power Dissipation: 54 W Package / Case: DirectFET-7 MX |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF6894MTR1PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 25V 1 N-CH HEXFET 1.3mOhms 26nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 170 A Rds On - Drain-Source Resistance: 1.7 mOhms Configuration: Single Dual Drain Dual Source Qg - Gate Charge: 29 nC Pd - Power Dissipation: 54 W Package / Case: DirectFET-7 MX |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF6894MTR1PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 25V 1 N-CH HEXFET 1.3mOhms 26nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 170 A Rds On - Drain-Source Resistance: 1.7 mOhms Configuration: Single Dual Drain Dual Source Qg - Gate Charge: 29 nC Pd - Power Dissipation: 54 W Package / Case: DirectFET-7 MX |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF6894MTR1PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 25V 1 N-CH HEXFET 1.3mOhms 26nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: 16 V Id - Continuous Drain Current: 170 A Rds On - Drain-Source Resistance: 1.7 mOhms Configuration: Single Dual Drain Dual Source Qg - Gate Charge: 29 nC Pd - Power Dissipation: 54 W Package / Case: DirectFET-7 MX |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF6894MTR1PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |