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International Rectifier . IRF7805ZPBF

International Rectifier . IRF7805ZPBF

Attributes

Brand name, Manufacturer name, Manufacturer, Brand, Label, Man, Publisher, StudioInternational Rectifier
extendedQty, qtyInStock0
moq, multiple1
MPN, Part Number, PartNumberIRF7805ZPBF
qtySourceupdateFromUrlEntry
Product Group, ProductGroupBISS
AsinB00LWL4PVQ B00LWL4THQ B00LWL4X8Q B00LWL511E B00M2D3YHY
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 942-IRF7805ZPBF X1 MS 942-IRF7805ZPBF X10 MS 942-IRF7805ZPBF X100 MS 942-IRF7805ZPBF X5 MS 942-IRF7805ZPBF X50
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 16 A Rds On - Drain-Source Resistance: 8.7 mOhms Configuration: Single Quad Drain Triple Source Qg - Gate Charge: 18 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2.5 W
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET 30V 1 N-CH HEXFET 6.8mOhms 18nC (1 piece) MOSFET 30V 1 N-CH HEXFET 6.8mOhms 18nC (10 pieces) MOSFET 30V 1 N-CH HEXFET 6.8mOhms 18nC (100 pieces) MOSFET 30V 1 N-CH HEXFET 6.8mOhms 18nC (5 pieces) MOSFET 30V 1 N-CH HEXFET 6.8mOhms 18nC (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark19K831511
1SourceIRF7805ZPBF11
RadwellIRF7805ZPBF11
swatee.comIRF7805ZPBF187611 @ $1.90
HotendaH183001211
STLAA.comIRF7805ZPBF912
Ewing ComponentsIRF7805ZPBF7100
Abacus TechnologiesIRF7805ZPBF1855
GreenTree ElectronicsIRF7805ZPBF1026

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MOSFET 30V 1 N-CH HEXFET 6.8mOhms 18nC (10 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 16 A Rds On - Drain-Source Resistance: 8.7 mOhms Configuration: Single Quad Drain Triple Source Qg - Gate Charge: 18 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2.5 W
CategoryIndustrial & Scientific
MPNIRF7805ZPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 30V 1 N-CH HEXFET 6.8mOhms 18nC (100 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 16 A Rds On - Drain-Source Resistance: 8.7 mOhms Configuration: Single Quad Drain Triple Source Qg - Gate Charge: 18 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2.5 W
CategoryIndustrial & Scientific
MPNIRF7805ZPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 30V 1 N-CH HEXFET 6.8mOhms 18nC (5 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 16 A Rds On - Drain-Source Resistance: 8.7 mOhms Configuration: Single Quad Drain Triple Source Qg - Gate Charge: 18 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2.5 W
CategoryIndustrial & Scientific
MPNIRF7805ZPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 30V 1 N-CH HEXFET 6.8mOhms 18nC (50 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 16 A Rds On - Drain-Source Resistance: 8.7 mOhms Configuration: Single Quad Drain Triple Source Qg - Gate Charge: 18 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2.5 W
CategoryIndustrial & Scientific
MPNIRF7805ZPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 30V 1 N-CH HEXFET 6.8mOhms 18nC (1 piece)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 16 A Rds On - Drain-Source Resistance: 8.7 mOhms Configuration: Single Quad Drain Triple Source Qg - Gate Charge: 18 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2.5 W
CategoryIndustrial & Scientific
MPNIRF7805ZPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)