IRF7809AVPBF - International Rectifier
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| IRF7809AVPBF | 1 | 1 | |||
| 1Source | IRF7809AVPBF | 1 | 1 | ||
| IRF7809AVPBF | 1 | 433 | 1 @ $0.76, 50 @ $0.68, 100 @ $0.61 | ||
| IRF7809AVPBF | -2 | ||||
| IRF7809AVPBF | -2 | ||||
| IRF7809AVPBF | 397 | 100 @ $0.39, 1000 @ $0.39 | |||
| IRF7809AVPBF | 21850 | ||||
| IRF7809AVPBF | 4689 |
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INTERNATIONAL RECTIFIER IRF7809AVPBF N CHANNEL MOSFET, 30V, 13.3A, SOIC
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | IRF7809AVPBF |
| Label | INTERNATIONAL RECTIFIER |
| Manufacturer | INTERNATIONAL RECTIFIER |
MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | <b>Price For:</b> Pack of 1 <b>Manufacturer</b>: International Rectifier <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 13.3 A <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 9 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 12 V <b>Qg - Gate Charge</b>: 41 nC <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 2.5 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF7809AVPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | <b>Price For:</b> Pack of 10 <b>Manufacturer</b>: International Rectifier <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 13.3 A <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 9 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 12 V <b>Qg - Gate Charge</b>: 41 nC <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 2.5 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF7809AVPBF |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | International Rectifier |
INTERNATIONAL RECTIFIER IRF7809AVPBF N CHANNEL MOSFET, 30V, 13.3A, SOIC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | <b>Price For:</b> Pack of 100<b>Order Unit:</b> Each\xa01 <b>Continuous Drain Current Id:</b>: 13.3 <b>Drain Source Voltage Vds:</b>: 30 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 8 <b>On Resistance Rds(on):</b>: 0.007 <b>Operating Temperature Max:</b>: 150 <b>Operating Temperature Min:</b>: -55 <b>Power Dissipation Pd:</b>: 2.5 <b>Rds(on) Test Voltage Vgs:</b>: 4.5 <b>SVHC:</b>: No SVHC (17-Dec-2014) <b>Threshold Voltage Vgs Typ:</b>: 1 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF7809AVPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | INTERNATIONAL RECTIFIER |
MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | <b>Price For:</b> Pack of 5 <b>Manufacturer</b>: International Rectifier <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 13.3 A <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 9 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 12 V <b>Qg - Gate Charge</b>: 41 nC <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 2.5 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF7809AVPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | <b>Price For:</b> Pack of 50 <b>Manufacturer</b>: International Rectifier <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 13.3 A <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 9 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 12 V <b>Qg - Gate Charge</b>: 41 nC <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 2.5 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF7809AVPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |