international-rectifier . IRF7855PBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 88K4656 | 1 | 1 | ||
| Little Diode | IRF7855PBF | 1 | 1 | ||
| 1Source | IRF7855PBF | 1 | 1 | ||
 Radwell | IRF7855PBF | 1 | 1 | ||
| Digi-Key | 12616374 | 1 | 1 | 1 @ $0.49 | |
| Hotenda | H1816506 | 1 | 2757 | 1 | 1 @ $1.49, 10 @ $1.33, 100 @ $1.03, 500 @ $0.85 |
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MOSFET 60V 1 N-CH HEXFET 9.4mOhms 26nC (1 piece)
Brand: International Rectifier
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | IRF7855PBF |
| Label | International Rectifier |
| Manufacturer | International Rectifier |
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 9.4 mOhms Qg - Gate Charge: 26 nC Pd - Power Dissipation: 2.5 W Mounting Style: SMD/SMT Package / Case: SOIC-8 Packaging: Tube |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF7855PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 60V 1 N-CH HEXFET 9.4mOhms 26nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 9.4 mOhms Qg - Gate Charge: 26 nC Pd - Power Dissipation: 2.5 W Mounting Style: SMD/SMT Package / Case: SOIC-8 Packaging: Tube |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF7855PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 60V 1 N-CH HEXFET 9.4mOhms 26nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 9.4 mOhms Qg - Gate Charge: 26 nC Pd - Power Dissipation: 2.5 W Mounting Style: SMD/SMT Package / Case: SOIC-8 Packaging: Tube |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF7855PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 60V 1 N-CH HEXFET 9.4mOhms 26nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 9.4 mOhms Qg - Gate Charge: 26 nC Pd - Power Dissipation: 2.5 W Mounting Style: SMD/SMT Package / Case: SOIC-8 Packaging: Tube |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF7855PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 60V 1 N-CH HEXFET 9.4mOhms 26nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 9.4 mOhms Qg - Gate Charge: 26 nC Pd - Power Dissipation: 2.5 W Mounting Style: SMD/SMT Package / Case: SOIC-8 Packaging: Tube |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF7855PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |