Vishay N Channel Mosfet, 500V, 2.5A D2-Pak - IRF820SPBF

N CHANNEL MOSFET, 500V, 2.5A D2-PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:2.5A; On Resistance Rds(on):3ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Single N-Channel 150 V 3 Ohms Surface Mount Power Mosfet - D2PAK-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.10.00.80 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 500 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Maximum Continuous Drain Current (A): 2.5 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 25 Maximum Drain Source Resistance (mOhm): 3000@10V Typical Gate Charge @ Vgs (nC): 24(Max)@10V Typical Gate Charge @ 10V (nC): 24(Max) Typical Input Capacitance @ Vds (pF): 360@25V Maximum Power Dissipation (mW): 3100 Typical Fall Time (ns): 16 Typical Rise Time (ns): 8.6 Typical Turn-Off Delay Time (ns): 33 Typical Turn-On Delay Time (ns): 8 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: D2PAK Pin Count: 3 Standard Package Name: TO-263 Mounting: Surface Mount Package Height: 4.83(Max) Package Length: 10.41(Max) Package Width: 9.65(Max) PCB changed: 2 Tab: Tab