INTERNATIONAL RECTIFIER . IRF8313PBF
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Radwell | IRF8313PBF | 1 | 1 | ||
| 1Source | IRF8313PBF | 1 | 1 | ||
| Digi-Key | 11557744 | 1 | 1 | 471 @ $0.24 |
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MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 9.7 A Rds On - Drain-Source Resistance: 21.6 mOhms Configuration: Dual Qg - Gate Charge: 6 nC Pd - Power Dissipation: 2 W Mounting Style: SMD/SMT Package / Case: SOIC-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF8313PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 9.7 A Rds On - Drain-Source Resistance: 21.6 mOhms Configuration: Dual Qg - Gate Charge: 6 nC Pd - Power Dissipation: 2 W Mounting Style: SMD/SMT Package / Case: SOIC-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF8313PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC (5 pieces)
Brand: International Rectifier
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | IRF8313PBF |
| Part number | IRF8313PBF |
| Label | International Rectifier |
| Manufacturer | International Rectifier |
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 9.7 A Rds On - Drain-Source Resistance: 21.6 mOhms Configuration: Dual Qg - Gate Charge: 6 nC Pd - Power Dissipation: 2 W Mounting Style: SMD/SMT Package / Case: SOIC-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF8313PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 9.7 A Rds On - Drain-Source Resistance: 21.6 mOhms Configuration: Dual Qg - Gate Charge: 6 nC Pd - Power Dissipation: 2 W Mounting Style: SMD/SMT Package / Case: SOIC-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF8313PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 9.7 A Rds On - Drain-Source Resistance: 21.6 mOhms Configuration: Dual Qg - Gate Charge: 6 nC Pd - Power Dissipation: 2 W Mounting Style: SMD/SMT Package / Case: SOIC-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF8313PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |