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international-rectifier . IRF8915PBF

international-rectifier . IRF8915PBF

Attributes

Brand name, Manufacturer nameinternational-rectifier
Manufacturerinternational-rectifier International Rectifier
extendedQty, qtyInStock0
moq, multiple1
MPN, Part Number, PartNumberIRF8915PBF
qtySourceupdateFromUrlEntry
Product Group, ProductGroupBISS
AsinB00LWM0BN6 B00LWM0DH0 B00LWM0GUY B00LWM0IE8 B00LWM0KNW B00M2D1IGI
Brand, Label, Man, Publisher, StudioInternational Rectifier
Case, PackageQuantity1 10 100 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 942-IRF8915PBF X1 MS 942-IRF8915PBF X10 MS 942-IRF8915PBF X100 MS 942-IRF8915PBF X5 MS 942-IRF8915PBF X50 MS 942-IRF8915PBF X500
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 8.9 A Rds On - Drain-Source Resistance: 27 mOhms Configuration: Dual Dual Drain Vgs th - Gate-Source Threshold Voltage: 1.7 V to 2.5 V Qg - Gate Charge: 4.9 nC
ProductTypeNameBISS ELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece 500
TitleMOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC (1 piece) MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC (10 pieces) MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC (100 pieces) MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC (5 pieces) MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC (50 pieces) MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC (500 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark31K231111
4 Star ElectronicsIRF8915PBF11
Digi-Key11545156355355355 @ $0.20
RadwellIRF8915PBF1211
1SourceIRF8915PBF11
Mouser942-IRF8915PBF128611 @ $1.09, 10 @ $0.48, 100 @ $0.37, 1000 @ $0.35, 10000 @ $0.30
HotendaH180209211

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MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC (10 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 8.9 A Rds On - Drain-Source Resistance: 27 mOhms Configuration: Dual Dual Drain Vgs th - Gate-Source Threshold Voltage: 1.7 V to 2.5 V Qg - Gate Charge: 4.9 nC
CategoryIndustrial & Scientific
MPNIRF8915PBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC (100 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 8.9 A Rds On - Drain-Source Resistance: 27 mOhms Configuration: Dual Dual Drain Vgs th - Gate-Source Threshold Voltage: 1.7 V to 2.5 V Qg - Gate Charge: 4.9 nC
CategoryIndustrial & Scientific
MPNIRF8915PBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC (5 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 8.9 A Rds On - Drain-Source Resistance: 27 mOhms Configuration: Dual Dual Drain Vgs th - Gate-Source Threshold Voltage: 1.7 V to 2.5 V Qg - Gate Charge: 4.9 nC
CategoryIndustrial & Scientific
MPNIRF8915PBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC (50 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 8.9 A Rds On - Drain-Source Resistance: 27 mOhms Configuration: Dual Dual Drain Vgs th - Gate-Source Threshold Voltage: 1.7 V to 2.5 V Qg - Gate Charge: 4.9 nC
CategoryIndustrial & Scientific
MPNIRF8915PBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC (500 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 8.9 A Rds On - Drain-Source Resistance: 27 mOhms Configuration: Dual Dual Drain Vgs th - Gate-Source Threshold Voltage: 1.7 V to 2.5 V Qg - Gate Charge: 4.9 nC
CategoryIndustrial & Scientific
MPNIRF8915PBF
Product groupBISS
Product typeBISS
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC (1 piece)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 8.9 A Rds On - Drain-Source Resistance: 27 mOhms Configuration: Dual Dual Drain Vgs th - Gate-Source Threshold Voltage: 1.7 V to 2.5 V Qg - Gate Charge: 4.9 nC
CategoryIndustrial & Scientific
MPNIRF8915PBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)