international-rectifier . IRF9358PBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 25T5523 | 1 | 1 | ||
![]() Radwell | IRF9358PBF | 3800 | 3800 | ||
| 1Source | IRF9358PBF | 1 | 1 | ||
| swatee.com | IRF9358PBF | 1 | 2260 | 1 | 1 @ $2.35 |
Related on Amazon
As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.
MOSFET DUAL -30V P-CH HEXFET 16.3mOhms (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: - 9.2 A Rds On - Drain-Source Resistance: 13 mOhms Configuration: Dual Qg - Gate Charge: 19 nC Pd - Power Dissipation: 2 W Mounting Style: SMD/SMT Package / Case: SOIC-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF9358PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET DUAL -30V P-CH HEXFET 16.3mOhms (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: - 9.2 A Rds On - Drain-Source Resistance: 13 mOhms Configuration: Dual Qg - Gate Charge: 19 nC Pd - Power Dissipation: 2 W Mounting Style: SMD/SMT Package / Case: SOIC-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF9358PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET DUAL -30V P-CH HEXFET 16.3mOhms (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: - 9.2 A Rds On - Drain-Source Resistance: 13 mOhms Configuration: Dual Qg - Gate Charge: 19 nC Pd - Power Dissipation: 2 W Mounting Style: SMD/SMT Package / Case: SOIC-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF9358PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET DUAL -30V P-CH HEXFET 16.3mOhms (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: - 9.2 A Rds On - Drain-Source Resistance: 13 mOhms Configuration: Dual Qg - Gate Charge: 19 nC Pd - Power Dissipation: 2 W Mounting Style: SMD/SMT Package / Case: SOIC-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF9358PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET DUAL -30V P-CH HEXFET 16.3mOhms (500 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: - 9.2 A Rds On - Drain-Source Resistance: 13 mOhms Configuration: Dual Qg - Gate Charge: 19 nC Pd - Power Dissipation: 2 W Mounting Style: SMD/SMT Package / Case: SOIC-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF9358PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET DUAL -30V P-CH HEXFET 16.3mOhms (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: - 9.2 A Rds On - Drain-Source Resistance: 13 mOhms Configuration: Dual Qg - Gate Charge: 19 nC Pd - Power Dissipation: 2 W Mounting Style: SMD/SMT Package / Case: SOIC-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF9358PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
