Vishay N Channel Mosfet, 500V, 20A, To-220Ab - IRFB20N50KPBF

N CHANNEL MOSFET, 500V, 20A, TO-220AB; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:20A; On Resistance Rds(on):0.21ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

VISHAY SILICONIX IRFB20N50KPBF N CH MOSFET, 500V, 20A, TO-220AB

Single N-Channel 500 V 0.29 Ohms Flange Mount Power Mosfet - TO-220AB ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant ECCN (US): EAR99 Part Status: NRND HTS: 8541.21.00.75 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 500 Maximum Gate Source Voltage (V): ±30 Maximum Continuous Drain Current (A): 20 Maximum Drain Source Resistance (mOhm): 250@10V Typical Gate Charge @ Vgs (nC): 110(Max)@10V Typical Gate Charge @ 10V (nC): 110(Max) Typical Input Capacitance @ Vds (pF): 2870@25V Maximum Power Dissipation (mW): 280000 Typical Fall Time (ns): 33 Typical Rise Time (ns): 74 Typical Turn-Off Delay Time (ns): 45 Typical Turn-On Delay Time (ns): 22 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: TO-220AB Pin Count: 3 Standard Package Name: TO-220 Mounting: Through Hole Package Height: 9.01(Max) Package Length: 10.51(Max) Package Width: 4.65(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole