VISHAY . IRFBC30APBF

VISHAY SILICONIX IRFBC30APBF N CHANNEL MOSFET, 600V, 3.6A TO-220

IRFBC30A Series N-Channel 600 V 2.2 Ohm Flange Mount Power Mosfet - TO-220AB ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.10.00.80 SVHC: Yes SVHC Exceeds Threshold: Yes Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 600 Maximum Gate Source Voltage (V): ±30 Maximum Continuous Drain Current (A): 3.6 Maximum Drain Source Resistance (mOhm): 2200@10V Typical Gate Charge @ Vgs (nC): 23(Max)@10V Typical Gate Charge @ 10V (nC): 23(Max) Typical Input Capacitance @ Vds (pF): 510@25V Maximum Power Dissipation (mW): 74000 Typical Fall Time (ns): 12 Typical Rise Time (ns): 13 Typical Turn-Off Delay Time (ns): 19 Typical Turn-On Delay Time (ns): 9.8 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: TO-220AB Pin Count: 3 Standard Package Name: TO-220 Mounting: Through Hole Package Height: 9.01(Max) Package Length: 10.51(Max) Package Width: 4.65(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole