Vishay Power Mosfet, N Channel, 6.2 A, 600 V, 1.2 Ohm, 10 V, 4 V Rohs Compliant: Yes - IRFBC40APBF

N CHANNEL MOSFET, 600V, 6.2A TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; On Resistance Rds(on):1.2ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

VISHAY SILICONIX IRFBC40APBF N CHANNEL MOSFET, 600V, 6.2A TO-220

VISHAY IRFBC40APBF Power MOSFET, N Channel, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V

VISHAY IRFBC40APBF Power MOSFET, N Channel, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V

VISHAY IRFBC40APBF Power MOSFET, N Channel, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V

VISHAY IRFBC40APBF Power MOSFET, N Channel, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V

Single N-Channel 600 V 1.2 Ohms Flange Mount Power Mosfet - TO-220AB ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.10.00.80 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 600 Maximum Gate Source Voltage (V): ±30 Maximum Continuous Drain Current (A): 6.2 Maximum Drain Source Resistance (mOhm): 1200@10V Typical Gate Charge @ Vgs (nC): 42(Max)@10V Typical Gate Charge @ 10V (nC): 42(Max) Typical Input Capacitance @ Vds (pF): 1036@25V Maximum Power Dissipation (mW): 125000 Typical Fall Time (ns): 18 Typical Rise Time (ns): 23 Typical Turn-Off Delay Time (ns): 31 Typical Turn-On Delay Time (ns): 13 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: TO-220AB Pin Count: 3 Standard Package Name: TO-220 Mounting: Through Hole Package Height: 9.01(Max) Package Length: 10.51(Max) Package Width: 4.65(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole