Vishay N Channel Mosfet, 800V, 4.1A I2-Pak - IRFBE30LPBF
Gallery
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 63J6694 | 1000 | 1000 | 1000 @ $1.41, 2500 @ $1.26 | |
 Galco | IRFBE30LPBF-VISH | 1000 | 1000 | 1 @ $1.24 | |
| Waldom | VISHAY SEMICONDUCTOR IRFBE30LPBF | 40 | 189 | 1 | 40 @ $1.30 |
| 1Source | IRFBE30LPBF | 1 | 1 | ||
| Digi-Key | 812051 | 1 | 1 | 1 @ $3.42, 10 @ $3.07, 100 @ $2.47, 500 @ $2.03, 1000 @ $1.68, 2000 @ $1.56, 5000 @ $1.51 | |
| RS Delivers | 180-8316 | 1 | 150 | 1 | 1 @ $0.78 |
 swatee.com | IRFBE30LPBF | 1 | 1259 | 1 | 1 @ $5.28 |
| iodParts | IRFBE30LPBF | 200 | 1000 | 200 | 200 @ $1.50, 750 @ $1.35 |
 Radwell | IRFBE30LPBF | 1 | 8 | 1 | 1 @ $1.86 |
| Future Electronics | 3466612 | 50 | 50 | 50 @ $2.32, 200 @ $1.79, 750 @ $1.68, 1250 @ $1.63, 2500 @ $1.58 | |
| Hotenda | H1827814 | 1 | 1000 | 1 | 1 @ $2.71, 10 @ $2.44, 25 @ $2.30, 100 @ $1.96, 250 @ $1.84, 500 @ $1.61 |
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Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | IRFBE30LPBF |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 800V 4.1 Amp (10 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 800 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 4.1 A Rds On - Drain-Source Resistance: 3 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFBE30LPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 800V 4.1 Amp (100 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 800 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 4.1 A Rds On - Drain-Source Resistance: 3 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFBE30LPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 800V 4.1 Amp (5 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 800 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 4.1 A Rds On - Drain-Source Resistance: 3 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFBE30LPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 800V 4.1 Amp (50 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 800 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 4.1 A Rds On - Drain-Source Resistance: 3 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFBE30LPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 800V 4.1 Amp (1 piece)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 800 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 4.1 A Rds On - Drain-Source Resistance: 3 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFBE30LPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
SILICONIX (VISHAY) IRFBE30LPBF Single N-Channel 800 V 3 Ohms Surface Mount Power Mosfet - TO-262 - 10 item(s)
Brand: SILICONIX (VISHAY)
Single N-Channel 800 V 3 Ohms Surface Mount Power Mosfet - TO-262 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Channel; VoltageDraintoSource: 800 V; Drain-sourceOnResistance-Max: 3 Ω;
- QgGateCharge: 78 nC; RatedPowerDissipation(P): 125 W;
Listing
| Product group | BISS Basic |
|---|---|
| Product type | BISS |
| Model | IRFBE30LPBF |
| Part number | IRFBE30LPBF |
| Items per pack | 10 |
| Label | SILICONIX (VISHAY) |
| Manufacturer | SILICONIX (VISHAY) |
Catalog
| Feature | ChannelType: N-Channel; VoltageDraintoSource: 800 V; Drain-sourceOnResistance-Max: 3 \u03a9; |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFBE30LPBF |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | SILICONIX (VISHAY) |