Vishay N Channel Mosfet, 800V, 4.1A D2-Pak - IRFBE30SPBF

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8542.39.00.01 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 800 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 4.1 Maximum Drain Source Resistance (mOhm): 3000@10V Typical Gate Charge @ Vgs (nC): 78(Max)@10V Typical Gate Charge @ 10V (nC): 78(Max) Typical Input Capacitance @ Vds (pF): 1300@25V Maximum Power Dissipation (mW): 125000 Typical Fall Time (ns): 30 Typical Rise Time (ns): 33 Typical Turn-Off Delay Time (ns): 82 Typical Turn-On Delay Time (ns): 12 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: D2PAK Pin Count: 3 Standard Package Name: TO-263 Mounting: Surface Mount Package Height: 4.83(Max) Package Length: 10.41(Max) Package Width: 9.65(Max) PCB changed: 2 Tab: Tab