IRFBF20LPBF-Vishay-MOSFETs
Gallery
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Galco | IRFBF20LPBF-VISH | 1000 | 1000 | 1 @ $1.08 | |
| TME | IRFBF20LPBF | 1 | 1 | 1 @ $1.39, 3 @ $1.25, 10 @ $1.11, 50 @ $0.99, 250 @ $0.92 | |
| 811973 | 1 | 1 | 1000 @ $1.46 | ||
 Radwell | IRFBF20LPBF | 1 | 1 | ||
| 1Source | IRFBF20LPBF | 1 | 1 | ||
 iodParts | IRFBF20LPBF | 1 | 1 | ||
| Win Source | IRFBF20LPBF | 1 | 8000 | 1 | |
| Hotenda | H1816655 | 1 | 2000 | 1 | 1 @ $2.36, 10 @ $2.12, 25 @ $2.00, 100 @ $1.70, 250 @ $1.60, 500 @ $1.40 |
| Future Electronics | 5270640 | 1000 | 1000 | 1000 @ $1.91, 50 @ $1.46, 100 @ $1.39, 250 @ $1.30, 500 @ $1.24 |
Related on Amazon
As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.
MOSFET N-Chan 900V 1.7 Amp (1 piece)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 900 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.7 A Rds On - Drain-Source Resistance: 8 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.1 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFBF20LPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 900V 1.7 Amp (10 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 900 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.7 A Rds On - Drain-Source Resistance: 8 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.1 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFBF20LPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 900V 1.7 Amp (100 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 900 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.7 A Rds On - Drain-Source Resistance: 8 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.1 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFBF20LPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 900V 1.7 Amp (5 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 900 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.7 A Rds On - Drain-Source Resistance: 8 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.1 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFBF20LPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET N-Chan 900V 1.7 Amp (50 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 900 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 1.7 A Rds On - Drain-Source Resistance: 8 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.1 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFBF20LPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
Vishay IRFBF20LPBF, Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) TO-262 (25 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 900 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 1.7 Maximum Drain Source Resistance (mOhm): 8000@10V Typical Gate Charge @ Vgs (nC): 38(Max)@10V Typical Gate Charge @ 10V (nC): 38(Max) Typical Input Capacitance @ Vds (pF): 490@25V Maximum Power Dissipation (mW): 3100 Typical Fall Time (ns): 32 Typical Rise Time (ns): 21 Typical Turn-Off Delay Time (ns): 56 Typical Turn-On Delay Time (ns): 8 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: TO-262 Pin Count: 3 Standard Package Name: I2PAK Mounting: Through Hole Package Height: 9.65(Max) Package Length: 10.67(Max) Package Width: 4.83(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | IRFBF20LPBF |
| Part number | IRFBF20LPBF |
| Items per pack | 25 |
| Label | Vishay |
| Manufacturer | Vishay |