Vishay N Channel Mosfet, 60V, 1.7A, Hd-1 - IRFD014PBF

N CHANNEL MOSFET, 60V, 1.7A, HD-1; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.7A; On Resistance Rds(on):0.2ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

VISHAY SILICONIX IRFD014PBF N CHANNEL MOSFET, 60V, 1.7A, HD-1

VISHAY IRFD014PBF. MOSFET Transistor, N Channel, 1.7 A, 60 V, 200 mohm, 10 V, 4 V

Single N-Channel 60 V 0.2 Ohms Through Hole Power Mosfet - HVMDIP-4 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.10.00.80 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Dual Drain Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 60 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Maximum Continuous Drain Current (A): 1.7 Maximum Drain Source Resistance (mOhm): 200@10V Typical Gate Charge @ Vgs (nC): 11(Max)@10V Typical Gate Charge @ 10V (nC): 11(Max) Typical Gate to Drain Charge (nC): 5.8(Max) Typical Gate to Source Charge (nC): 3.1(Max) Typical Reverse Recovery Charge (nC): 200 Typical Input Capacitance @ Vds (pF): 310@25V Typical Output Capacitance (pF): 160 Maximum Power Dissipation (mW): 1300 Typical Fall Time (ns): 19 Typical Rise Time (ns): 50 Typical Turn-Off Delay Time (ns): 13 Typical Turn-On Delay Time (ns): 10 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 175 Supplier Package: HVMDIP Pin Count: 4 Standard Package Name: DIP Mounting: Through Hole Package Height: 3.37(Max) Package Length: 5(Max) Package Width: 6.29(Max) PCB changed: 4 Lead Shape: Through Hole