VISHAY . IRFD224PBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 19K8157 | 1 | 1 | ||
 Galco | IRFD224PBF-VISH | 2500 | 2500 | 1 @ $0.58 | |
| 1Source | IRFD224PBF | 1 | 1 | ||
| Digi-Key | 812479 | 1 | 1 | 1 @ $1.56, 10 @ $1.40, 100 @ $1.09, 500 @ $0.90, 1000 @ $0.71 | |
 Radwell | IRFD224PBF | 2500 | 2500 | 1 @ $0.92 | |
| Win Source | IRFD224PBF | 1 | 1928 | 1 | |
| Hotenda | H1816362 | 1 | 1 |
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MOSFET N-Chan 250V 0.63 Amp (10 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 250 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 630 mA Rds On - Drain-Source Resistance: 1.1 Ohms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1000 mW Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFD224PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay Semiconductors |
MOSFET N-Chan 250V 0.63 Amp (100 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 250 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 630 mA Rds On - Drain-Source Resistance: 1.1 Ohms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1000 mW Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFD224PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay Semiconductors |
MOSFET N-Chan 250V 0.63 Amp (5 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 250 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 630 mA Rds On - Drain-Source Resistance: 1.1 Ohms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1000 mW Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFD224PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay Semiconductors |
MOSFET N-Chan 250V 0.63 Amp (50 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 250 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 630 mA Rds On - Drain-Source Resistance: 1.1 Ohms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1000 mW Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFD224PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay Semiconductors |
MOSFET N-Chan 250V 0.63 Amp (500 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 250 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 630 mA Rds On - Drain-Source Resistance: 1.1 Ohms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1000 mW Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFD224PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay Semiconductors |
MOSFET N-Chan 250V 0.63 Amp (1 piece)
Brand: Vishay Semiconductors
Catalog
| Feature | Manufacturer: Vishay Product Category: Single-Gate MOSFET Transistors RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 250 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 630 mA Rds On - Drain-Source Resistance: 1.1 Ohms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1000 mW Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFD224PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay Semiconductors |
IRFD224PBF, Trans MOSFET N-CH 250V 0.63A 4-Pin HVMDIP (50 Items)
Brand: Vishay
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | IRFD224PBF |
| Part number | IRFD224PBF |
| Items per pack | 50 |
| Label | Vishay |
| Manufacturer | Vishay |