Vishay N Channel Mosfet, 400V, 490Ma, Hd-1 - IRFD320PBF

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Dual Drain Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 400 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 0.49 Maximum Drain Source Resistance (mOhm): 1800@10V Typical Gate Charge @ Vgs (nC): 20(Max)@10V Typical Gate Charge @ 10V (nC): 20(Max) Typical Input Capacitance @ Vds (pF): 410@25V Maximum Power Dissipation (mW): 1000 Typical Fall Time (ns): 13 Typical Rise Time (ns): 14 Typical Turn-Off Delay Time (ns): 30 Typical Turn-On Delay Time (ns): 10 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: HVMDIP Pin Count: 4 Standard Package Name: DIP Mounting: Through Hole Package Height: 3.37(Max) Package Length: 5(Max) Package Width: 6.29(Max) PCB changed: 4 Lead Shape: Through Hole