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International Rectifier . IRFH5210TRPBF

International Rectifier . IRFH5210TRPBF

Attributes

Brand name, Manufacturer name, Manufacturer, Brand, Label, Man, Publisher, StudioInternational Rectifier
extendedQty, qtyInStock0
moq, multiple1
MPN, Part Number, PartNumberIRFH5210TRPBF
qtySourceupdateFromUrlEntry
AsinB00HKHYRDC B00LWL9YIA B00LWLA1PK B00LWLA4L6 B00LWLA75O B00LWLAA6K B00M2CLLR0
Case, PackageQuantity1 10 100 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 942-IRFH5210TRPBF X1 MS 942-IRFH5210TRPBF X10 MS 942-IRFH5210TRPBF X100 MS 942-IRFH5210TRPBF X5 MS 942-IRFH5210TRPBF X50 MS 942-IRFH5210TRPBF X500
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 14.9 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 40 nC Maximum Operating Temperature: + 150 C
ProductGroupBISS
ProductTypeNameBISS ELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece 500
TitleMOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC (1 piece) MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC (10 pieces) MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC (100 pieces) MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC (5 pieces) MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC (50 pieces) MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC (500 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark74R149911
1SourceIRFH5210TRPBF11
RadwellIRFH5210TRPBF40004000
HotendaH182029011

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MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC
Catalog
CategoryIndustrial & Scientific
MPNIRFH5210TRPBF
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC (10 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 14.9 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 40 nC Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNIRFH5210TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC (100 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 14.9 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 40 nC Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNIRFH5210TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC (5 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 14.9 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 40 nC Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNIRFH5210TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC (50 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 14.9 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 40 nC Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNIRFH5210TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC (500 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 14.9 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 40 nC Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNIRFH5210TRPBF
Product groupBISS
Product typeBISS
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC (1 piece)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 14.9 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 40 nC Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNIRFH5210TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)