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international-rectifier . IRFH5406TRPBF

international-rectifier . IRFH5406TRPBF

Attributes

Brand name, Manufacturer nameinternational-rectifier
Manufacturerinternational-rectifier International Rectifier
extendedQty, qtyInStock0
moq, multiple1
MPN, Part Number, PartNumberIRFH5406TRPBF
qtySourceupdateFromUrlEntry
Product Group, ProductGroupBISS
AsinB00LWLBWJE B00LWLBZJG B00LWLC5FY B00LWLC8WY B00LWLCBTY B00M2CMTPI
Brand, Label, Man, Publisher, StudioInternational Rectifier
Case, PackageQuantity1 10 100 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 942-IRFH5406TRPBF X1 MS 942-IRFH5406TRPBF X10 MS 942-IRFH5406TRPBF X100 MS 942-IRFH5406TRPBF X5 MS 942-IRFH5406TRPBF X50 MS 942-IRFH5406TRPBF X500
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 14.4 mOhms Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 23 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 46 W
ProductTypeNameBISS ELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece 500
TitleMOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC (1 piece) MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC (10 pieces) MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC (100 pieces) MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC (5 pieces) MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC (50 pieces) MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC (500 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark74R150211
RadwellIRFH5406TRPBF40004000
1SourceIRFH5406TRPBF11
swatee.comIRFH5406TRPBF1663311 @ $3.18
HotendaH183029811

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MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC (10 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 14.4 mOhms Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 23 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 46 W
CategoryIndustrial & Scientific
MPNIRFH5406TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC (100 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 14.4 mOhms Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 23 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 46 W
CategoryIndustrial & Scientific
MPNIRFH5406TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC (5 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 14.4 mOhms Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 23 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 46 W
CategoryIndustrial & Scientific
MPNIRFH5406TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC (50 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 14.4 mOhms Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 23 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 46 W
CategoryIndustrial & Scientific
MPNIRFH5406TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC (500 pieces)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 14.4 mOhms Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 23 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 46 W
CategoryIndustrial & Scientific
MPNIRFH5406TRPBF
Product groupBISS
Product typeBISS
ManufacturerInternational Rectifier
View on Amazon (paid link)
MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC (1 piece)
Brand: International Rectifier
Catalog
FeatureManufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 14.4 mOhms Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 23 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 46 W
CategoryIndustrial & Scientific
MPNIRFH5406TRPBF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInternational Rectifier
View on Amazon (paid link)