International Rectifier . IRFHM792TR2PBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 05W5522 | 1 | 1 | ||
| Newark | 54T9244 | 1 | 1 | ||
![]() Radwell | IRFHM792TR2PBF | 1 | 1 | ||
| 1Source | IRFHM792TR2PBF | 1 | 1 | ||
| Hotenda | H1802444 | 1 | 1 |
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MOSFET MOSFT 100V dual 2.9A 195mOhm (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 2.3 A Rds On - Drain-Source Resistance: 195 mOhms Configuration: Dual Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 4.2 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFHM792TR2PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 100V dual 2.9A 195mOhm (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 2.3 A Rds On - Drain-Source Resistance: 195 mOhms Configuration: Dual Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 4.2 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFHM792TR2PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 100V dual 2.9A 195mOhm (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 2.3 A Rds On - Drain-Source Resistance: 195 mOhms Configuration: Dual Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 4.2 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFHM792TR2PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET MOSFT 100V dual 2.9A 195mOhm (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 2.3 A Rds On - Drain-Source Resistance: 195 mOhms Configuration: Dual Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 4.2 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFHM792TR2PBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
