international-rectifier . IRFHS8242TRPBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 25T5484 | 1 | 1 | ||
| 1Source | IRFHS8242TRPBF | 1 | 1 | ||
 Radwell | IRFHS8242TRPBF | 4000 | 4000 | ||
| Digi-Key | 2156-IRFHS8242TRPBF-ND | 2084 | 376000 | 2084 | 2084 @ $0.12 |
| Hotenda | H1829589 | 1 | 1 |
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MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 21 A Rds On - Drain-Source Resistance: 21 mOhms Configuration: Single Quint Drain Dual Source Qg - Gate Charge: 4.3 nC Pd - Power Dissipation: 2.1 W Package / Case: PQFN-6 2x2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFHS8242TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 21 A Rds On - Drain-Source Resistance: 21 mOhms Configuration: Single Quint Drain Dual Source Qg - Gate Charge: 4.3 nC Pd - Power Dissipation: 2.1 W Package / Case: PQFN-6 2x2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFHS8242TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 21 A Rds On - Drain-Source Resistance: 21 mOhms Configuration: Single Quint Drain Dual Source Qg - Gate Charge: 4.3 nC Pd - Power Dissipation: 2.1 W Package / Case: PQFN-6 2x2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFHS8242TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 21 A Rds On - Drain-Source Resistance: 21 mOhms Configuration: Single Quint Drain Dual Source Qg - Gate Charge: 4.3 nC Pd - Power Dissipation: 2.1 W Package / Case: PQFN-6 2x2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFHS8242TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 21 A Rds On - Drain-Source Resistance: 21 mOhms Configuration: Single Quint Drain Dual Source Qg - Gate Charge: 4.3 nC Pd - Power Dissipation: 2.1 W Package / Case: PQFN-6 2x2 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFHS8242TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |