Vishay Semiconductor . IRFIB5N65APBF

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 650 Maximum Gate Source Voltage (V): ±30 Maximum Gate Threshold Voltage (V): 4 Maximum Continuous Drain Current (A): 5.1 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 25 Maximum Drain Source Resistance (mOhm): 930@10V Typical Gate Charge @ Vgs (nC): 48(Max)@10V Typical Gate Charge @ 10V (nC): 48(Max) Typical Input Capacitance @ Vds (pF): 1417@25V Maximum Power Dissipation (mW): 60000 Typical Fall Time (ns): 18 Typical Rise Time (ns): 20 Typical Turn-Off Delay Time (ns): 34 Typical Turn-On Delay Time (ns): 14 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: TO-220FP Pin Count: 3 Standard Package Name: TO-220 Mounting: Through Hole Package Height: 16.12(Max) Package Length: 10.63(Max) Package Width: 4.83(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole