Vishay Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant: Yes - IRFIBE30GPBF

MOSFET Transistor, N Channel, 2.1 A, 800 V, 3 ohm, 10 V, 4 V RoHS Compliant: Yes

VISHAY IRFIBE30GPBF Power MOSFET, N Channel, 2.1 A, 800 V, 3 ohm, 10 V, 4 V

Single N-Channel 800 V 3 Ohms Flange Mount Power Mosfet - TO-220FP ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.10.00.80 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 800 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 2.1 Maximum Drain Source Resistance (mOhm): 3000@10V Typical Gate Charge @ Vgs (nC): 78(Max)@10V Typical Gate Charge @ 10V (nC): 78(Max) Typical Input Capacitance @ Vds (pF): 1300@25V Maximum Power Dissipation (mW): 35000 Typical Fall Time (ns): 30 Typical Rise Time (ns): 33 Typical Turn-Off Delay Time (ns): 82 Typical Turn-On Delay Time (ns): 12 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: TO-220FP Pin Count: 3 Standard Package Name: TO-220 Mounting: Through Hole Package Height: 16.12(Max) Package Length: 10.63(Max) Package Width: 4.83(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole